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DTC114EET1G

Onsemi

DTC114EET1G by Onsemi

DTC114EET1G by Onsemi is a NPN BJT with built-in resistor for switching applications. Features include hFE of 35, VCE of 50V, and IC of 0.1A. It comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 100,119 parts In-Stock

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$0.170

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$0.063

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$0.040

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100,119

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$0.063

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$0.027

DigiKey

USA . 3,185 parts In-Stock

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$0.170

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$0.063

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EBV Elektronik

Germany . 3,648,000 parts In-Stock

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USA . 624,000 parts In-Stock

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Newark

USA . 300,000 parts In-Stock

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Canada . 294,000 parts In-Stock

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Avnet

USA . 84,000 parts In-Stock

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RS (Exports)

UK . 40,200 parts In-Stock

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Farnell

UK . 6,640 parts In-Stock

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Element14

Singapore . 6,640 parts In-Stock

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$0.088

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Verical

USA . 6,000 parts In-Stock

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Master Electronics

USA . 6,000 parts In-Stock

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Chip1Stop

Japan . 829 parts In-Stock

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Arrow

USA . 265 parts In-Stock

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$0.038

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265

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.042

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Digiode

USA . 2,113 parts In-Stock

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TME

Poland . 163 parts In-Stock

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Forefront Electronics and Design

USA . 750 parts In-Stock

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$0.250

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IBS Electronics

USA . 4,527,000 parts In-Stock

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Flip Electronics

USA . 637,789 parts In-Stock

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NAC Semi

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Bristol Electronics

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Vyrian

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Chip Stock

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Cyclops Electronics Ltd

UK . 26,537 parts In-Stock

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LWI Electronics Inc

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Cogito LLC

Ukraine . 7,397 parts In-Stock

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Sensible Micro Corp

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ComSIT Distribution GmbH

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Rebound Electronics

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Holdelec - ElecDif-Pro

France . 2,175 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,929 parts In-Stock

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Classic Components Corporation

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Prism Electronics

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Semtec, LLC

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Distributors (Availability)

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Ampacity Inc.

Singapore . 117,968 parts In-Stock

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$0.009

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Corohmni

South Africa . 154 parts In-Stock

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Semicontronic

India . 120,426 parts In-Stock

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Continental Prestige Electronics

USA . 6,088 parts In-Stock

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Argo Parts USA

USA . 3,615 parts In-Stock

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Corphita

USA . 275 parts In-Stock

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Component Stockers USA

USA . 357,517 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,905 parts In-Stock

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$0.408

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.704

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Perfect Parts

USA . 3,153,636 parts In-Stock

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RC Electronics

USA . 110,098 parts In-Stock

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GreenTree Electronics

Israel . 66,000 parts In-Stock

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Eastek

USA . 48,000 parts In-Stock

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Futuretech Components

Singapore . 24,000 parts In-Stock

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iodParts Technologies Inc.

India . 17,800 parts In-Stock

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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Kulean Microsystems

USA . 7,124 parts In-Stock

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TANS Electronics

Latvia . 6,571 parts In-Stock

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Alle Elektronik GmbH

Germany . 5,034 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Problanco Electronics

Mexico . 3,190 parts In-Stock

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Assy Fe

Spain . 2,941 parts In-Stock

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SupplyDigital Components

Austria . 1,986 parts In-Stock

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UHIMA Technologies

Türkiye . 597 parts In-Stock

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Kepictronics

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Overview

Discover the innovation and reliability of the DTC114EET1G by Onsemi, a top-tier manufacturer in the industry. This NPN transistor with a built-in resistor is perfect for switching applications, providing seamless performance and efficiency. Whether you're a hobbyist or a professional, this small outline package offers convenience and versatility, making it ideal for a wide range of projects. Trust Onsemi to deliver exceptional quality and value with each product, ensuring that your needs are met with precision and excellence. Elevate your electronics with the DTC114EET1G and experience superior functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the product easy to handle and transport.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the board.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required.

Surface Mount: YES

Surface mount technology allows for easy and efficient soldering onto PCBs.

Maximum Power Dissipation (Abs): 0.3 W

Efficient power handling capabilities for various applications.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement on the PCB and allows for efficient use of space.

No. of Terminals: 3

Simple 3-terminal design for straightforward connections.

Minimum DC Current Gain (hFE): 35

Minimum DC current gain ensures stable and predictable amplification.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring high collector-emitter voltage ratings.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels in various circuit configurations.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and conductivity.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options on the PCB.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand reflow soldering processes for up to 40 seconds.

Peak Reflow Temperature °C: 260

Can handle high temperature reflow soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC114EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC114EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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