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DTC114EUAT106

ROHM

DTC114EUAT106 by ROHM

ROHM DTC114EUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications due to built-in resistor. Features GULL WING terminals in a RECTANGULAR package style.

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$0.049

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Overview

Upgrade your electronic projects with the DTC114EUAT106 by ROHM, a high-quality Small Signal Bipolar Junction Transistor with built-in resistor. Perfect for switching applications, this NPN transistor offers a low VCEsat of 0.3V and a minimum DC current gain of 30, ensuring efficient performance. With a maximum collector-emitter voltage of 50V and a compact gull wing package design, this transistor is ideal for space-constrained designs. Trust in ROHM's reputation for reliability and innovation, and experience the value and benefits this product brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties and durability, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and helps save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Suitable for surface mount applications, making the transistor easy to integrate into compact electronic devices.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates minimal saturation voltage drop, leading to efficient switching operations.

Package Shape: RECTANGULAR

Rectangular shape ensures easy handling and placement on the PCB during assembly.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections, enhancing the overall reliability of the transistor.

No. of Terminals: 3

Three terminals enable simple and straightforward connection within a circuit.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation allows for efficient operation and helps prevent overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is ideal for compact electronic designs.

Maximum Power Dissipation Ambient: 0.2 W

Even in ambient conditions, the transistor can handle a power dissipation of 0.2 W, ensuring stable performance.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures reliable amplification characteristics in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high temperatures and operate reliably in various environments.

Maximum Collector-Emitter Voltage: 50 V

Allows for a maximum collector-emitter voltage of 50V, suitable for a range of low to medium voltage applications.

Transistor Element Material: SILICON

Silicon-based material provides good performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.1 A

Can handle a collector current of 0.1A, suitable for low current applications such as signal amplification.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperature for up to 10 seconds, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C allows for reliable soldering connections.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency of 250 MHz indicates good high-frequency response, suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC114EUAT106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTC114EUAT106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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