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DTC143EET1G

Onsemi

DTC143EET1G by Onsemi

DTC143EET1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 15. This small outline transistor operates up to 150°C and comes in a surface mount package suitable for various electronic devices.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

1k+ parts

$0.022

10k+ parts

-

3,000

$0.026

$0.025

$0.022

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Mouser Electronics

USA . 316,290 parts In-Stock

1+ parts

$0.190

100+ parts

$0.071

1k+ parts

$0.045

10k+ parts

$0.034

316,290

$0.190

$0.071

$0.045

$0.034

DigiKey

USA . 175,390 parts In-Stock

1+ parts

$0.190

100+ parts

$0.070

1k+ parts

$0.045

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-

175,390

$0.190

$0.070

$0.045

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Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$1.637

100+ parts

$1.490

1k+ parts

$1.342

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500

$1.637

$1.490

$1.342

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Arrow

USA . 645,000 parts In-Stock

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$0.017

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$0.017

Verical

USA . 645,000 parts In-Stock

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$0.017

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Avnet

USA . 45,000 parts In-Stock

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45,000

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Farnell

UK . 41,670 parts In-Stock

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$0.043

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41,670

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$0.043

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Element14

Singapore . 41,670 parts In-Stock

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$0.081

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41,670

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$0.081

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Newark

USA . 36,160 parts In-Stock

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$0.069

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$0.044

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36,160

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$0.069

$0.044

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Master Electronics

USA . 24,000 parts In-Stock

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24,000

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$0.030

EBV Elektronik

Germany . 21,000 parts In-Stock

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21,000

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RS (Exports)

UK . 11,900 parts In-Stock

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$0.052

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$0.036

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$0.025

11,900

-

$0.052

$0.036

$0.025

Chip1Stop

Japan . 11,573 parts In-Stock

1+ parts

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100+ parts

$0.026

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$0.024

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$0.018

11,573

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$0.026

$0.024

$0.018

Flip Electronics (Authorized)

USA . 5,408 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 2,100 parts In-Stock

1+ parts

$0.024

100+ parts

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2,100

$0.024

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Nova Conductors

Japan . 550 parts In-Stock

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$0.041

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550

$0.041

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Chip Stock

USA . 332,120 parts In-Stock

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Vyrian

USA . 235,046 parts In-Stock

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IBS Electronics

USA . 24,000 parts In-Stock

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NAC Semi

USA . 21,000 parts In-Stock

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$0.100

21,000

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$0.100

Zilex Electronics Inc.

Canada . 18,000 parts In-Stock

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Flip Electronics

USA . 18,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 278 parts In-Stock

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$0.008

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278

$0.008

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Ampacity Inc.

Singapore . 239,351 parts In-Stock

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$0.020

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Corphita

USA . 1,077 parts In-Stock

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Component Stockers USA

USA . 2,430,049 parts In-Stock

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$0.020

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$0.020

2,430,049

$0.030

$0.020

$0.020

$0.020

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.040

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$0.039

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2,000

$0.040

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Argo Parts USA

USA . 1,043 parts In-Stock

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$0.041

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$0.040

1,043

$0.041

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$0.040

Semicontronic

India . 196,521 parts In-Stock

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$0.044

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$0.043

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$0.043

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196,521

$0.044

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$0.043

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Aztec Data Supply Inc.

USA . 235 parts In-Stock

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$1.581

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235

$1.581

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.637

100+ parts

$1.490

1k+ parts

$1.342

10k+ parts

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500

$1.637

$1.490

$1.342

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Perfect Parts

USA . 1,088,640 parts In-Stock

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Glotronic Ltd.

UK . 393,600 parts In-Stock

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GreenTree Electronics

Israel . 213,000 parts In-Stock

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Authorized Procurement Solutions

USA . 126,000 parts In-Stock

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Continental Prestige Electronics

USA . 42,260 parts In-Stock

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$0.042

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$0.029

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42,260

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Lixinc

USA . 17,344 parts In-Stock

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Metaverse IC Inc.

Canada . 16,992 parts In-Stock

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Eastek

USA . 15,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,144 parts In-Stock

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TANS Electronics

Latvia . 6,711 parts In-Stock

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SupplyDigital Components

Austria . 5,621 parts In-Stock

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Kepictronics

USA . 5,525 parts In-Stock

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Kulean Microsystems

USA . 4,025 parts In-Stock

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Futuretech Components

Singapore . 1,200 parts In-Stock

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Problanco Electronics

Mexico . 135 parts In-Stock

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UHIMA Technologies

Türkiye . 5 parts In-Stock

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Overview

Discover the Onsemi DTC143EET1G Small Signal Bipolar Junction Transistor, a high-quality product crafted by a renowned manufacturer. This NPN transistor with a built-in resistor is perfect for switching applications, offering reliability and efficiency. With a maximum collector-emitter voltage of 50V and a maximum collector current of 0.1A, this transistor provides excellent performance in a compact package. Trust Onsemi to deliver cutting-edge technology that meets your needs. Elevate your projects with the DTC143EET1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, offering versatile functionality.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor convenient for compact applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance.

Surface Mount: YES

Surface-mount technology allows for easy and efficient soldering onto PCBs, making installation quick and hassle-free.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor, ensuring compatibility with various circuit layouts.

Maximum Power Dissipation (Abs): 0.3 W

With a high power dissipation capability, this transistor can handle moderate levels of power without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space and allows for dense PCB layouts, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain ensures stable and reliable amplification of the input signal, improving overall performance.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand elevated temperatures, suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating makes this transistor suitable for applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in transistor construction.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating allows for sufficient current flow, ensuring proper operation in various load conditions.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish offers good solderability and reliability, ensuring secure connections for the terminal pins.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and layout, accommodating different connection configurations.

Maximum Time At Peak Reflow Temperature (s): 40

The short reflow time at peak temperature minimizes thermal stress on the transistor during soldering, preventing damage to the device.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can undergo lead-free soldering processes without compromising performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC143EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC143EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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