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DTC123JKAT146

ROHM

DTC123JKAT146 by ROHM

ROHM DTC123JKAT146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 80, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.

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Overview

Enhance your electronic projects with the DTC123JKAT146 by ROHM, a high-quality NPN small signal bipolar junction transistor with a built-in resistor. Perfect for switching applications, this versatile component offers reliable performance and efficient power dissipation in a compact package. Trust in the reputation of ROHM, a leading manufacturer known for their innovative technology and superior quality products. Experience the value and benefits of using the DTC123JKAT146 in your designs, and unlock the potential for seamless functionality and precise control. Elevate your creations with this advanced transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers good thermal conductivity and electrical insulation, making the product reliable and durable.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, offering high performance and versatility.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space, making this transistor convenient to use in various applications.

Transistor Application: SWITCHING

Designed for switching applications, offering fast response times and efficient performance.

Surface Mount: YES

Surface mount technology enables automated assembly and reduces overall product size, providing efficient installation and space-saving benefits.

Maximum VCEsat: 0.3 V

Low saturation voltage helps in minimizing power loss and improving energy efficiency during operation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy handling and placement on circuit boards, ensuring convenience in the manufacturing process.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and secure solder connections, ensuring reliability in the application.

No. of Terminals: 3

Three terminals offer connectivity options and flexibility in circuit designs, accommodating various requirements.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation capability helps in preventing overheating, improving the overall reliability and performance of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and facilitates compact designs, suitable for applications with limited board space.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures effective amplification and signal processing, enhancing the overall performance of the transistor.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand harsh environmental conditions and ensure stable operation over a wide range of temperatures.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage applications without the risk of breakdown or damage.

Transistor Element Material: SILICON

Silicon material offers excellent performance characteristics, high reliability, and temperature stability, ensuring durable operation of the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate collector currents, making it suitable for a wide range of applications without the risk of overheating or damage.

Terminal Finish: TIN SILVER COPPER

Tin silver copper finish provides good solderability and corrosion resistance, ensuring long-term reliability and stability in various operating conditions.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options, enabling versatile use in different applications.

Maximum Time At Peak Reflow Temperature (s): 10

Ability to withstand peak reflow temperatures for up to 10 seconds ensures reliable solder joints and secure connections during manufacturing.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance enables safe and effective soldering process, ensuring proper assembly of the transistor without the risk of damage.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency indicates fast switching speeds and optimal performance in high-frequency applications, making the transistor suitable for advanced electronic designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC123JKAT146 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTC123JKAT146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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