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DTC114TET1G

Onsemi

DTC114TET1G by Onsemi

DTC114TET1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min DC current gain of 160, max collector-emitter voltage of 50V, and max power dissipation of 0.3W. This small outline package with gull wing terminals operates at up to 150°C, making it suitable for various electronic devices requiring low-power switching capabilities.

Median Price

$0.045

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 299 parts In-Stock

1+ parts

$0.153

100+ parts

$0.062

1k+ parts

$0.031

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299

$0.153

$0.062

$0.031

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Mouser Electronics

USA . 77,039 parts In-Stock

1+ parts

$0.190

100+ parts

$0.071

1k+ parts

$0.045

10k+ parts

$0.029

77,039

$0.190

$0.071

$0.045

$0.029

DigiKey

USA . 3,269 parts In-Stock

1+ parts

$0.190

100+ parts

$0.070

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$0.045

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-

3,269

$0.190

$0.070

$0.045

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Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$1.462

100+ parts

$1.330

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$1.199

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350

$1.462

$1.330

$1.199

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Flip Electronics (Authorized)

USA . 464,000 parts In-Stock

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Rochester

USA . 310,476 parts In-Stock

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$0.024

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$0.020

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$0.018

310,476

-

$0.024

$0.020

$0.018

Verical

USA . 304,476 parts In-Stock

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304,476

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Newark

USA . 45,450 parts In-Stock

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$0.037

45,450

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$0.037

Chip1Stop

Japan . 1,870 parts In-Stock

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$0.035

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$0.018

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$0.017

1,870

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$0.035

$0.018

$0.017

Farnell

UK . 2 parts In-Stock

1+ parts

-

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$0.032

10k+ parts

$0.026

2

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-

$0.032

$0.026

Element14

Singapore . 2 parts In-Stock

1+ parts

-

100+ parts

$0.045

1k+ parts

$0.042

10k+ parts

$0.038

2

-

$0.045

$0.042

$0.038

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,628 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,628

$0.024

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Nova Conductors

Japan . 10 parts In-Stock

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$0.047

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10

$0.047

-

-

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Bristol Electronics

USA . 11,241 parts In-Stock

1+ parts

$0.101

100+ parts

$0.051

1k+ parts

$0.020

10k+ parts

$0.013

11,241

$0.101

$0.051

$0.020

$0.013

Maritex

Poland . 1,489 parts In-Stock

1+ parts

$0.113

100+ parts

$0.060

1k+ parts

$0.057

10k+ parts

$0.051

1,489

$0.113

$0.060

$0.057

$0.051

Flip Electronics

USA . 464,000 parts In-Stock

1+ parts

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464,000

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NAC Semi

USA . 288,000 parts In-Stock

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$0.036

288,000

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$0.036

Sensible Micro Corp

USA . 129,765 parts In-Stock

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Vyrian

USA . 103,280 parts In-Stock

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103,280

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Chip Stock

USA . 71,000 parts In-Stock

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Dan-Mar Components

USA . 11,241 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,721 parts In-Stock

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4,721

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 103,084 parts In-Stock

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$0.020

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Corphita

USA . 1,232 parts In-Stock

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$0.022

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Corohmni

South Africa . 234 parts In-Stock

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$0.025

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234

$0.025

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Component Stockers USA

USA . 723,052 parts In-Stock

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$0.030

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$0.020

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$0.020

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$0.020

723,052

$0.030

$0.020

$0.020

$0.020

Argo Parts USA

USA . 1,944 parts In-Stock

1+ parts

$0.047

100+ parts

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$0.046

1,944

$0.047

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$0.046

Continental Prestige Electronics

USA . 17,925 parts In-Stock

1+ parts

$0.154

100+ parts

$0.047

1k+ parts

$0.027

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$0.020

17,925

$0.154

$0.047

$0.027

$0.020

Aztec Data Supply Inc.

USA . 2,873 parts In-Stock

1+ parts

$1.163

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2,873

$1.163

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.462

100+ parts

$1.330

1k+ parts

$1.199

10k+ parts

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350

$1.462

$1.330

$1.199

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Perfect Parts

USA . 85,720 parts In-Stock

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85,720

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Problanco Electronics

Mexico . 7,832 parts In-Stock

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7,832

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TANS Electronics

Latvia . 5,520 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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QUARKTWIN TECHNOLOGY LTD

USA . 3,218 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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Resion (Excess)

USA . 2,651 parts In-Stock

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2,651

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Kulean Microsystems

USA . 1,897 parts In-Stock

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1,897

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Kepictronics

USA . 1,800 parts In-Stock

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1,800

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SupplyDigital Components

Austria . 1,487 parts In-Stock

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1,487

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Authorized Procurement Solutions

USA . 580 parts In-Stock

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580

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Lixinc

USA . 483 parts In-Stock

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483

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Netroflash

USA . 50 parts In-Stock

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$0.046

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$0.045

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$0.044

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$0.044

UHIMA Technologies

Türkiye . 15 parts In-Stock

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Overview

Discover the power of the DTC114TET1G by Onsemi, a high-quality small signal bipolar junction transistor perfect for switching applications. With Onsemi's reputation for excellence in manufacturing, this NPN transistor features a built-in resistor and offers reliable performance in a compact package. Ideal for a wide range of electronic devices, this transistor provides customers with value, efficiency, and versatility. Upgrade your products with the DTC114TET1G and experience the benefits of superior quality and advanced technology.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - The use of plastic/epoxy material makes this transistor lightweight and cost-effective.

Polarity or Channel Type

NPN - NPN polarity allows for easy integration with other NPN components in a circuit.

Configuration

SINGLE WITH BUILT-IN RESISTOR - The built-in resistor simplifies circuit design and saves PCB space.

Transistor Application

SWITCHING - Designed for switching applications, ensuring efficient performance in various electronic devices.

Surface Mount

YES - Surface mount capability makes it easy to integrate into compact PCB designs.

Package Shape

RECTANGULAR - Rectangular shape provides stability and easy placement on the PCB.

Terminal Form

GULL WING - Gull wing terminals offer secure solder connections and mechanical strength.

No. of Terminals

3 - Three terminals provide simple connectivity for basic circuit requirements.

Maximum Power Dissipation (Abs)

0.3 W - With a maximum power dissipation of 0.3W, this transistor can handle moderate loads.

Package Style (Meter)

SMALL OUTLINE - Small outline package style conserves space on the PCB.

Minimum DC Current Gain (hFE)

160 - A minimum DC current gain of 160 ensures reliable amplification in the circuit.

Maximum Operating Temperature

150 °C - With a maximum operating temperature of 150°C, this transistor can withstand high heat conditions.

Maximum Collector-Emitter Voltage

50 V - The high maximum collector-emitter voltage of 50V allows for versatile applications.

Transistor Element Material

SILICON - Silicon material offers high reliability and performance in various environments.

Maximum Collector Current (IC)

0.1 A - With a maximum collector current of 0.1A, this transistor can handle moderate current levels.

Terminal Finish

Matte Tin (Sn) - annealed - Matte tin finish provides protection against corrosion and ensures a reliable electrical connection.

Terminal Position

DUAL - Dual terminal position offers flexibility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s)

40 - Can withstand peak reflow temperatures for up to 40 seconds, ensuring stable solder joints.

Peak Reflow Temperature °C

260 - Peak reflow temperature of 260°C ensures proper soldering and reliability during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC114TET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC114TET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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