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DTC144EET1G

Onsemi

DTC144EET1G by Onsemi

DTC144EET1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals operates up to 150°C, making it suitable for various electronic devices.

Median Price

$0.056

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

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Mouser Electronics

USA . 2,515 parts In-Stock

1+ parts

$0.200

100+ parts

$0.070

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$0.044

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$0.038

2,515

$0.200

$0.070

$0.044

$0.038

Chip1Stop

Japan . 2,200 parts In-Stock

1+ parts

$1.750

100+ parts

$0.098

1k+ parts

$0.058

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2,200

$1.750

$0.098

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Future Electronics

Canada . 84,000 parts In-Stock

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Rochester

USA . 71,850 parts In-Stock

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Verical

USA . 66,000 parts In-Stock

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Farnell

UK . 3,019 parts In-Stock

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$0.060

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Element14

Singapore . 3,019 parts In-Stock

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$0.056

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$0.055

Arrow

USA . 3,000 parts In-Stock

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Flip Electronics (Authorized)

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DigiKey

USA . 2,875 parts In-Stock

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$0.028

2,875

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Newark

USA . 2,154 parts In-Stock

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$0.062

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$0.039

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Digiode

USA . 877 parts In-Stock

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$0.024

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Nova Conductors

Japan . 68 parts In-Stock

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68

$0.041

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Bristol Electronics

USA . 3,795 parts In-Stock

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$0.087

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$0.043

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$0.017

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$0.013

3,795

$0.087

$0.043

$0.017

$0.013

TME

Poland . 359 parts In-Stock

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$0.150

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$0.061

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$0.037

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$0.026

359

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Chip Stock

USA . 296,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 285,815 parts In-Stock

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IBS Electronics

USA . 90,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 44,625 parts In-Stock

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Vyrian

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NAC Semi

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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Lakeland Logistics Inc

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EMSNET

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J2 Sourcing AB

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EZ Electronic Parts

Israel . 208 parts In-Stock

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Bas Electronics GmbH & Co. KG

Germany . 42 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 29,100 parts In-Stock

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$0.014

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Corohmni

South Africa . 445 parts In-Stock

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Corphita

USA . 2,273 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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$0.039

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Perfect Parts

USA . 970,011 parts In-Stock

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iodParts Technologies Inc.

India . 192,130 parts In-Stock

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RC Electronics

USA . 134,142 parts In-Stock

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Eastek

USA . 111,000 parts In-Stock

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Continental Prestige Electronics

USA . 66,000 parts In-Stock

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Kepictronics

USA . 36,000 parts In-Stock

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Kulean Microsystems

USA . 6,828 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,471 parts In-Stock

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SupplyDigital Components

Austria . 6,217 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,314 parts In-Stock

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Lixinc

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GreenTree Electronics

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Overview

Discover the superior quality and reliability of the DTC144EET1G by Onsemi, a leading manufacturer in the industry. As a small signal bipolar junction transistor with NPN polarity and built-in resistor, this component is perfect for switching applications. With its compact rectangular shape and gull wing terminals, it offers easy surface mounting for seamless integration. Trust in Onsemi's expertise to deliver a high-performance product that meets your needs with precision. Upgrade your projects with the DTC144EET1G and experience unparalleled efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used type of BJT, allowing for easy integration into circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by eliminating the need for an external resistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Facilitates easy and convenient mounting on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Provides a compact form factor, suitable for applications with space constraints.

Terminal Form: GULL WING

Enables secure soldering and strong mechanical connection on the PCB.

No. of Terminals: 3

Simplifies connection and integration into circuits with a minimal number of terminals.

Maximum Power Dissipation (Abs): 0.3 W

Suitable for low power applications, ensuring efficient performance.

Package Style (Meter): SMALL OUTLINE

Compact package style suitable for small devices and circuit layouts.

Minimum DC Current Gain (hFE): 80

Ensures reliable amplification and switching capabilities.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon material ensures stable and reliable performance over the long term.

Maximum Collector Current (IC): 0.1 A

Suitable for low to moderate current applications, ensuring safe operation.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and durable terminal finish for secure soldering.

Terminal Position: DUAL

Facilitates easy connection and integration into circuits with dual terminal placement.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand reflow soldering process, ensuring proper assembly onto PCBs.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during manufacturing processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC144EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC144EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-660-6882, 5961016606882

NIIN

016606882

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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