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DTC123JETL

ROHM

DTC123JETL by ROHM

ROHM DTC123JETL is a NPN BJT transistor with VCEsat of 0.3V, hFE of 80, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at max temp of 150°C with peak reflow temp of 260°C, suitable for high-frequency operations up to 250MHz.

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$0.230

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Overview

Discover the ROHM DTC123JETL, a top-quality Small Signal BJT perfect for switching applications. Manufactured by industry leader ROHM, this NPN transistor boasts a built-in resistor, making it a versatile solution for various electronic projects. With a low VCEsat of 0.3V and a high DC current gain of 80, this component ensures optimal performance and efficiency. Whether you're a hobbyist or a professional, the DTC123JETL offers unmatched value, reliability, and ease of use, making it the go-to choice for all your circuit design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and low noise characteristics.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making integration easier in compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast response times and efficient on/off switching performance.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on PCBs, enhancing assembly efficiency and reducing overall product size.

Maximum VCEsat: 0.3 V

The low VCEsat value indicates minimal power loss, making this transistor energy-efficient and suitable for power-sensitive applications.

Package Shape: RECTANGULAR

The rectangular shape of the package offers a compact form factor, ideal for space-constrained designs.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections and facilitate automated assembly processes, ensuring reliable performance.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity in circuits and enables flexibility in circuit configurations.

Maximum Power Dissipation (Abs): 0.15 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves PCB space and provides efficient heat dissipation, contributing to overall product performance.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures consistent and stable amplification, making this transistor suitable for precision applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in various environments, enhancing the transistor's versatility.

Maximum Collector-Emitter Voltage: 50 V

The high VCE rating provides a safety margin for voltage spikes and surges, ensuring protection for the transistor and connected components.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise characteristics, and excellent reliability, making them a preferred choice in many electronic applications.

Maximum Collector Current (IC): 0.1 A

The high collector current rating allows for handling moderate current levels, making this transistor suitable for various load requirements.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides excellent conductivity, corrosion resistance, and solderability, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

Dual terminal positions offer flexibility in PCB layout and component placement, enabling efficient circuit design and assembly.

Maximum Time At Peak Reflow Temperature (s): 10

The short time at peak reflow temperature minimizes thermal stress on the transistor, preserving its electrical and mechanical integrity during soldering.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability ensures reliable soldering connections and component integration, meeting industry standards for lead-free assembly.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency indicates fast signal response and high-speed switching capabilities, making this transistor ideal for RF and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC123JETL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTC123JETL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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