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DTC143ZET1G

Onsemi

DTC143ZET1G by Onsemi

DTC143ZET1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.3W. This small outline package with gull wing terminals operates up to 150°C, making it suitable for various electronic devices requiring efficient switching capabilities.

Median Price

$0.091

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,000 parts In-Stock

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$0.026

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$0.022

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$0.026

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Newark

USA . 25,110 parts In-Stock

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$0.148

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$0.067

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$0.031

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Arrow

USA . 413 parts In-Stock

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$0.060

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$0.037

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413

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$0.060

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$0.026

Mouser Electronics

USA . 1,445 parts In-Stock

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$0.044

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1,445

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$0.070

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EBV Elektronik

Germany . 690,000 parts In-Stock

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Element14

Singapore . 25,110 parts In-Stock

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Farnell

UK . 12,000 parts In-Stock

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Chip1Stop

Japan . 2,300 parts In-Stock

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Verical

USA . 413 parts In-Stock

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413

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Distributors (In-Stock)

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Digiode

USA . 1,960 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Bristol Electronics

USA . 479,797 parts In-Stock

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NAC Semi

USA . 282,000 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

UK . 60,060 parts In-Stock

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Chip Stock

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IBS Electronics

USA . 60,000 parts In-Stock

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Dan-Mar Components

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ACDS - Activité Composants Distribution Service

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LIBRA Elektronik GmbH

Germany . 3,000 parts In-Stock

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TME

Poland . 2,125 parts In-Stock

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$0.028

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Microfarads

USA . 709 parts In-Stock

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ComSIT Distribution GmbH

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Bas Electronics GmbH & Co. KG

Germany . 8 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 170,092 parts In-Stock

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$0.013

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Component Stockers USA

USA . 2,557 parts In-Stock

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Corphita

USA . 1,246 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Continental Prestige Electronics

USA . 28,485 parts In-Stock

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$0.029

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Modulus Dynamics

Lithuania . 15,235 parts In-Stock

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$0.477

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Corohmni

South Africa . 33 parts In-Stock

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$0.957

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Benley Electronics

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Advanced Electronics

New Zealand . 92 parts In-Stock

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$1.666

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$1.516

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$1.366

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Aztec Data Supply Inc.

USA . 2,478 parts In-Stock

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$1.936

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Perfect Parts

USA . 7,888,059 parts In-Stock

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Eastek

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 609,101 parts In-Stock

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iBuyXS LLC

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Glotronic Ltd.

UK . 412,800 parts In-Stock

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Infinite Electronics LLP (Excess)

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ChipstoGo Electronic ltd

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iodParts Technologies Inc.

India . 50,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 8,007 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

USA . 4,018 parts In-Stock

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SupplyDigital Components

Austria . 4,012 parts In-Stock

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Argo Parts USA

USA . 3,993 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Formix International (Excess)

India . 2,468 parts In-Stock

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UHIMA Technologies

Türkiye . 869 parts In-Stock

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Lixinc

USA . 588 parts In-Stock

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Overview

Looking for a reliable Small Signal Bipolar Junction Transistor (BJT) for your switching applications? Look no further than the DTC143ZET1G by Onsemi. With its NPN polarity, built-in resistor, and high DC current gain, this transistor offers superior performance and quality. Manufactured by Onsemi, a trusted name in the industry, this transistor guarantees durability and efficiency. Whether you're in the automotive, industrial, or consumer electronics industry, this surface mount transistor is perfect for your needs. Upgrade your designs with the DTC143ZET1G and experience unmatched value and benefits today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage during handling and installation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits and are suitable for a wide range of applications, making this product versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making the product more efficient and cost-effective.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for digital circuits and power management.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standard footprint for easy integration into various electronic devices and systems.

No. of Terminals: 3

With three terminals, this transistor is easy to connect in a circuit, providing flexibility and compatibility with different electronic components.

Maximum Power Dissipation (Abs): 0.3 W

The high power dissipation rating ensures that the transistor can handle current and voltage levels without overheating, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices where size is a constraint.

Minimum DC Current Gain (hFE): 80

With a minimum DC current gain of 80, this transistor provides consistent and stable amplification in electronic circuits, ensuring reliable signal processing.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the transistor to withstand elevated temperatures without performance degradation, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides insulation and protection against voltage spikes, ensuring the safety and reliability of the transistor in a circuit.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its high performance and reliability, making this transistor a durable and efficient choice.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads, making it suitable for a variety of low-power applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides good solderability and conductivity, ensuring a reliable and durable connection in the circuit.

Terminal Position: DUAL

The dual terminal position allows for easy installation and connection in the circuit, providing flexibility and compatibility with various PCB layouts.

Maximum Time At Peak Reflow Temperature (s): 40

The short reflow time at peak temperature minimizes the risk of heat damage during soldering, ensuring the reliability and longevity of the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper soldering and bonding of the transistor to the PCB, providing a secure and durable connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC143ZET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 0.1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC143ZET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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