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DTC144EM3T5G

Onsemi

DTC144EM3T5G by Onsemi

DTC144EM3T5G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. With a package style of small outline, it is ideal for surface mount applications in electronics requiring compact design and efficient power dissipation up to 0.6W at temperatures up to 150°C.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 2,463,121 parts In-Stock

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$0.037

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$0.031

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$0.028

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$0.037

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$0.028

DigiKey

USA . 2,463,121 parts In-Stock

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$0.050

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Flip Electronics (Authorized)

USA . 976,000 parts In-Stock

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Newark

USA . 48,000 parts In-Stock

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Arrow

USA . 8,000 parts In-Stock

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Verical

USA . 8,000 parts In-Stock

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Chip1Stop

Japan . 135 parts In-Stock

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Digiode

USA . 2,423 parts In-Stock

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$0.029

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Nova Conductors

Japan . 50 parts In-Stock

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USA . 976,000 parts In-Stock

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Vyrian

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Chip Stock

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ACDS - Activité Composants Distribution Service

France . 10,792 parts In-Stock

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NAC Semi

USA . 8,000 parts In-Stock

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ECAB

Sweden . 4,602 parts In-Stock

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A&K Electronics

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Bristol Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 671,379 parts In-Stock

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$0.021

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Corohmni

South Africa . 374 parts In-Stock

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Corphita

USA . 436 parts In-Stock

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Argo Parts USA

USA . 2,081 parts In-Stock

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$0.061

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Aztec Data Supply Inc.

USA . 15,460 parts In-Stock

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$1.660

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$1.660

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Continental Prestige Electronics

USA . 2,515,751 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 27,636 parts In-Stock

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Authorized Procurement Solutions

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Eastek

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Austria . 7,817 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

Mexico . 5,702 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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Kepictronics

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Alle Elektronik GmbH

Germany . 1,600 parts In-Stock

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Metaverse IC Inc.

Canada . 605 parts In-Stock

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Netroflash

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UHIMA Technologies

Türkiye . 112 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the DTC144EM3T5G by Onsemi. Crafted with precision and reliability in mind, this small signal bipolar junction transistor offers seamless switching capabilities for a wide range of applications. With a single configuration and built-in resistor, this NPN transistor is designed to streamline your projects while maximizing efficiency. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the DTC144EM3T5G brings to your electronics. Elevate your designs with this cutting-edge component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already including a resistor.

Transistor Application: SWITCHING

Designed for efficient switching operations in various electronic circuits.

Surface Mount: YES

Allows for easy installation on circuit boards.

Maximum Power Dissipation (Abs): 0.6 W

Can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 80

Ensures reliable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring low to moderate voltage levels.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels for various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC144EM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC144EM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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