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NSVB114YPDXV6T1G

Onsemi

NSVB114YPDXV6T1G by Onsemi

NSVB114YPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistor, max VCE of 50V, and hFE of 80. This surface-mount transistor has a package style of small outline and complies with AEC-Q101 standards.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

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1k+

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Chip Stock

USA . 39,000 parts In-Stock

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Vyrian

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AZTECH Wire

Italy . 310 parts In-Stock

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SupplyDigital Components

Austria . 7,522 parts In-Stock

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TANS Electronics

Latvia . 7,267 parts In-Stock

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Kulean Microsystems

USA . 6,892 parts In-Stock

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Problanco Electronics

Mexico . 2,712 parts In-Stock

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Corphita

USA . 1,700 parts In-Stock

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UHIMA Technologies

Türkiye . 545 parts In-Stock

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Corohmni

South Africa . 481 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the NSVB114YPDXV6T1G by Onsemi. Manufactured by a trusted name in the industry, this Small Signal Bipolar Junction Transistor offers quality and reliability like no other. Whether you're looking to enhance your switching applications or optimize your circuit designs, this product is the perfect choice. With its built-in resistor and dual NPN and PNP elements, you can expect seamless performance and efficiency. Experience the value and benefits of using Onsemi's NSVB114YPDXV6T1G in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for different applications.

Polarity or Channel Type: NPN AND PNP

Versatile as it allows for both NPN and PNP configurations, catering to a wide range of circuit designs and requirements.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Enables easy and efficient surface mounting onto PCBs, saving space and simplifying the manufacturing process.

Maximum Power Dissipation (Abs): 0.5 W

Can handle a maximum power dissipation of 0.5W, suitable for low to moderate power applications.

Minimum DC Current Gain (hFE): 80

Ensures a minimum DC current gain of 80, indicating good amplification capabilities for various signal processing tasks.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, suitable for applications where higher voltage handling is required.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1A, suitable for low to moderate current applications.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, ensuring high reliability and quality for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVB114YPDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVB114YPDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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