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NSVBC847BDW1T2G

Onsemi

NSVBC847BDW1T2G by Onsemi

NSVBC847BDW1T2G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, min DC current gain of 200, and max operating temp of 150°C. With a small outline package style and peak reflow temp of 260°C, it meets AEC-Q101 standards.

Median Price

$0.270

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,950 parts In-Stock

1+ parts

$0.270

100+ parts

$0.103

1k+ parts

$0.067

10k+ parts

$0.047

2,950

$0.270

$0.103

$0.067

$0.047

Mouser Electronics

USA . 639 parts In-Stock

1+ parts

$0.280

100+ parts

$0.106

1k+ parts

$0.071

10k+ parts

$0.055

639

$0.280

$0.106

$0.071

$0.055

Avnet

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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48,000

-

-

-

-

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.043

1k+ parts

$0.036

10k+ parts

$0.032

3,000

-

$0.043

$0.036

$0.032

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,419 parts In-Stock

1+ parts

$0.033

100+ parts

-

1k+ parts

-

10k+ parts

-

2,419

$0.033

-

-

-

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.094

100+ parts

-

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-

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-

15

$0.094

-

-

-

Flip Electronics

USA . 42,000 parts In-Stock

1+ parts

-

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42,000

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-

-

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Vyrian

USA . 6,770 parts In-Stock

1+ parts

-

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6,770

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ComSIT Distribution GmbH

Germany . 6,067 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,067

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,558 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

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6,558

$0.030

-

-

-

Corphita

USA . 1,191 parts In-Stock

1+ parts

$0.032

100+ parts

-

1k+ parts

-

10k+ parts

-

1,191

$0.032

-

-

-

Corohmni

South Africa . 312 parts In-Stock

1+ parts

$0.035

100+ parts

-

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312

$0.035

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

$0.088

10k+ parts

-

50

$0.092

-

$0.088

-

Continental Prestige Electronics

USA . 5,168 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

5,168

$0.094

-

-

$0.092

Argo Parts USA

USA . 1,785 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

$0.091

1,785

$0.094

-

-

$0.091

SupplyDigital Components

Austria . 8,126 parts In-Stock

1+ parts

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8,126

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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8,000

-

-

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Problanco Electronics

Mexico . 7,434 parts In-Stock

1+ parts

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7,434

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-

-

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Kulean Microsystems

USA . 6,546 parts In-Stock

1+ parts

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6,546

-

-

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TANS Electronics

Latvia . 5,750 parts In-Stock

1+ parts

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5,750

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Perfect Parts

USA . 3,326 parts In-Stock

1+ parts

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3,326

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UHIMA Technologies

Türkiye . 584 parts In-Stock

1+ parts

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584

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Overview

Experience superior performance and reliability with the NSVBC847BDW1T2G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that are perfect for applications such as amplifiers. With a maximum collector-emitter voltage of 45V and a minimum DC current gain of 200, this transistor offers excellent efficiency and power dissipation. Its compact rectangular package and dual terminal position make it easy to integrate into your designs. Trust Onsemi to provide you with the best-in-class components for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Commonly used for amplification and signal switching applications, making it versatile for various circuit designs.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in audio and signal processing circuits.

Maximum Power Dissipation (Abs): 0.38 W

Can handle power dissipation efficiently without overheating, ensuring stable operation under load conditions.

Minimum DC Current Gain (hFE): 200

Provides high current gain, making it suitable for applications requiring efficient signal amplification.

Maximum Collector-Emitter Voltage: 45 V

Has a high collector-emitter voltage rating, allowing it to handle higher voltages in circuits without breakdown.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for harsh environmental conditions.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during reflow soldering processes, ensuring reliable assembly onto PCBs.

Nominal Transition Frequency (fT): 100 MHz

Features a high transition frequency, making it suitable for high-frequency amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC847BDW1T2G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVBC847BDW1T2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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