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NSVBC123JDXV6T5G

Onsemi

NSVBC123JDXV6T5G by Onsemi

NSVBC123JDXV6T5G by Onsemi is a NPN BJT transistor with 0.25 V max VCEsat, 80 min hFE, and 50 V max VCE. It is used for switching applications in automotive electronics due to its AEC-Q101 reference standard compliance and 0.1 A max IC.

Median Price

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Lifecycle Status

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1k+

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Digiode

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AZTECH Wire

Italy . 515 parts In-Stock

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Problanco Electronics

Mexico . 7,521 parts In-Stock

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SupplyDigital Components

Austria . 6,687 parts In-Stock

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TANS Electronics

Latvia . 5,120 parts In-Stock

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Corphita

USA . 2,124 parts In-Stock

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Kulean Microsystems

USA . 1,175 parts In-Stock

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Corohmni

South Africa . 367 parts In-Stock

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UHIMA Technologies

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Overview

Experience high-quality performance with the NSVBC123JDXV6T5G by Onsemi, a cutting-edge Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor offers unparalleled reliability and efficiency. With a maximum VCEsat of 0.25V and a minimum DC Current Gain of 80, this transistor guarantees superior performance. Whether you're working on automotive, industrial, or consumer electronics projects, the NSVBC123JDXV6T5G is the perfect choice for your needs. Upgrade your designs with this versatile transistor and enjoy the benefits of its advanced features.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits and switching applications, making this transistor versatile for different electronic designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor allows for simplified circuit design and can help reduce external component count, making integration easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds and efficient performance.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and reducing production costs.

Maximum VCEsat: 0.25 V

Low VCEsat voltage results in minimal power loss and improved efficiency in the switching operation of the transistor.

No. of Elements: 2

Having 2 elements allows for increased functionality and application flexibility in electronic circuits.

Maximum Power Dissipation (Abs): 0.5 W

The high maximum power dissipation rating ensures reliable performance under various operating conditions without risk of overheating.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 indicates good amplification capabilities, providing consistent and stable performance in amplification circuits.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor can handle high voltage loads safely and reliably.

Minimum Operating Temperature: -55 °C

The wide minimum operating temperature range allows for use in various environments and ensures stable operation even in extreme conditions.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A enables handling of moderate current loads, suitable for many switching applications.

Reference Standard: AEC-Q101

Meeting the AEC-Q101 standard ensures high reliability and quality, making this transistor suitable for automotive and other demanding applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC123JDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVBC123JDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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