Loading...

NSVB143TPDXV6T1G

Onsemi

NSVB143TPDXV6T1G by Onsemi

NSVB143TPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, hFE of 160, VCE of 50V, and IC of 0.1A. This transistor comes in a small outline package suitable for surface mount technology.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

$0.106

1k+ parts

$0.088

10k+ parts

$0.078

20,000

-

$0.106

$0.088

$0.078

DigiKey

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.130

20,000

-

-

-

$0.130

Verical

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.098

16,000

-

-

-

$0.098

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,093 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

10k+ parts

-

1,093

$0.083

-

-

-

Chip Stock

USA . 46,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

46,000

-

-

-

-

PC Components Company LLC

USA . 18,140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,140

-

-

-

-

Bristol Electronics

USA . 18,140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,140

-

-

-

-

Vyrian

USA . 11,422 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,422

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 155 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

155

$0.078

-

-

-

Corphita

USA . 2,278 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

2,278

$0.078

-

-

-

AZTECH Wire

Italy . 784 parts In-Stock

1+ parts

$13.780

100+ parts

-

1k+ parts

-

10k+ parts

-

784

$13.780

-

-

-

Continental Prestige Electronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.078

10k+ parts

-

20,000

-

-

$0.078

-

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Kulean Microsystems

USA . 6,526 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,526

-

-

-

-

TANS Electronics

Latvia . 6,131 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,131

-

-

-

-

SupplyDigital Components

Austria . 1,360 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,360

-

-

-

-

UHIMA Technologies

Türkiye . 837 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

837

-

-

-

-

Problanco Electronics

Mexico . 454 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

454

-

-

-

-

Overview

Looking for a reliable and versatile solution for your small signal switching applications? Look no further than the NSVB143TPDXV6T1G by Onsemi. With a reputation for excellence in manufacturing, Onsemi delivers quality products that meet the highest standards. This Small Signal Bipolar Junction Transistor (BJT) offers the perfect combination of NPN and PNP polarity types, making it suitable for a wide range of applications. Its built-in resistor and high DC current gain ensure optimal performance, while its compact design and surface mount capability make it easy to integrate into your projects. Trust Onsemi's NSVB143TPDXV6T1G to deliver the value, benefits, and advantages you need for your next electronics project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the transistor from external elements, ensuring a longer lifespan.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility in circuit design and compatibility with different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for compact applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable and efficient performance in such scenarios.

Surface Mount: YES

This feature makes it easier to mount the transistor on circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards, maximizing space utilization.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power loads effectively.

Minimum DC Current Gain (hFE): 160

A high minimum DC current gain ensures stable and consistent performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, providing consistent performance and durability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is suitable for low to moderate current applications.

Terminal Position: DUAL

The dual terminal position allows for easy and secure connection in circuit layouts.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures high-quality, reliable performance for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVB143TPDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-F6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVB143TPDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19