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NSVBC115EPDXV6T1G

Onsemi

NSVBC115EPDXV6T1G by Onsemi

NSVBC115EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring separate elements with built-in resistor. With max VCEsat of 0.25V, it operates in temp range -55 to 150 °C, ideal for AEC-Q101 automotive applications due to its compact small outline package.

Median Price

$0.560

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,905 parts In-Stock

1+ parts

$0.560

100+ parts

$0.368

1k+ parts

$0.203

10k+ parts

$0.072

3,905

$0.560

$0.368

$0.203

$0.072

Flip Electronics (Authorized)

USA . 100,000 parts In-Stock

1+ parts

-

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100,000

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Verical

USA . 96,000 parts In-Stock

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96,000

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Distributors (In-Stock)

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Digiode

USA . 554 parts In-Stock

1+ parts

$0.446

100+ parts

-

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554

$0.446

-

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Vyrian

USA . 2,499 parts In-Stock

1+ parts

$0.470

100+ parts

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2,499

$0.470

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Flip Electronics

USA . 100,000 parts In-Stock

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100,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 924 parts In-Stock

1+ parts

$0.423

100+ parts

-

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924

$0.423

-

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Corohmni

South Africa . 174 parts In-Stock

1+ parts

$0.470

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174

$0.470

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Kulean Microsystems

USA . 5,687 parts In-Stock

1+ parts

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5,687

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TANS Electronics

Latvia . 1,592 parts In-Stock

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1,592

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Problanco Electronics

Mexico . 1,587 parts In-Stock

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1,587

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SupplyDigital Components

Austria . 1,419 parts In-Stock

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1,419

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UHIMA Technologies

Türkiye . 469 parts In-Stock

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469

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Overview

Enhance your electronic designs with the NSVBC115EPDXV6T1G by Onsemi, a top-tier manufacturer known for their high-quality components. These Small Signal Bipolar Junction Transistors (BJTs) offer unmatched performance and reliability, making them perfect for a wide range of applications. With compact packaging, built-in resistors, and dual NPN and PNP elements, this product provides exceptional value and efficiency. Upgrade your projects today with Onsemi's innovative technology and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP polarity or channel types allows for flexibility in circuit design and compatibility with different types of electronics.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The separate configuration with built-in resistors simplifies circuit design and saves space on the PCB, making it a convenient choice for compact electronic projects.

Surface Mount: YES

Being surface mountable makes the transistor easy to integrate into modern PCB designs, providing efficiency in assembly and space-saving benefits.

Maximum VCEsat: 0.25 V

The low VCEsat value indicates minimal collector-emitter saturation voltage, leading to efficient power management and reduced heat dissipation in the transistor.

Package Shape: RECTANGULAR

The rectangular package shape offers easy handling and placement on the PCB, ensuring a secure fit and reliable connection in the circuit.

No. of Elements: 2

With two elements in one package, this transistor provides enhanced functionality and versatility for circuit design, offering more possibilities for application.

Maximum Power Dissipation (Abs): 0.5 W

The high maximum power dissipation capability of 0.5W ensures the transistor can handle power efficiently and reliably, suitable for various demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and facilitates compact design layouts, making it ideal for applications with limited space constraints.

Minimum DC Current Gain (hFE): 80

The minimum DC current gain of 80 indicates strong amplification capabilities, enabling the transistor to provide high gain and signal amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures and harsh environments, ensuring reliable performance under various conditions.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50V allows the transistor to handle high voltage levels safely, making it suitable for diverse power applications.

Transistor Element Material: SILICON

Being made of silicon, the transistor offers dependable performance and superior electrical properties, making it a reliable choice for various electronic circuits.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C ensures the transistor can operate in cold environments or extreme conditions without compromising performance, enhancing its versatility.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1A allows the transistor to handle moderate current levels, suitable for a wide range of low to medium power applications.

Terminal Position: DUAL

Having dual terminal positions simplifies installation and connection in the circuit, providing ease of use and flexibility in PCB layout design.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures the transistor meets quality and reliability requirements for automotive electronics, making it a trusted choice for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC115EPDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BAIS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVBC115EPDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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