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NSVBCX17LT1G

Onsemi

NSVBCX17LT1G by Onsemi

NSVBCX17LT1G by Onsemi is a PNP BJT with 45V VCEO, 0.5A IC, and hFE of 40. Ideal for automotive applications due to AEC-Q101 compliance, -55 to 150°C operating temp range, and small outline package style. Suitable for surface mount designs with matte tin finish and gull wing terminals.

Median Price

$0.395

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,970 parts In-Stock

1+ parts

$0.380

100+ parts

$0.153

1k+ parts

$0.101

10k+ parts

$0.087

4,970

$0.380

$0.153

$0.101

$0.087

DigiKey

USA . 40 parts In-Stock

1+ parts

$0.410

100+ parts

$0.157

1k+ parts

$0.103

10k+ parts

$0.074

40

$0.410

$0.157

$0.103

$0.074

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 87 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

-

87

$0.103

-

-

-

Digiode

USA . 1,455 parts In-Stock

1+ parts

$0.256

100+ parts

-

1k+ parts

-

10k+ parts

-

1,455

$0.256

-

-

-

Flip Electronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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30,000

-

-

-

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Vyrian

USA . 2,710 parts In-Stock

1+ parts

-

100+ parts

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2,710

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 55 parts In-Stock

1+ parts

$0.101

100+ parts

-

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-

10k+ parts

-

55

$0.101

-

-

-

Argo Parts USA

USA . 2,410 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

2,410

$0.103

-

-

$0.100

Continental Prestige Electronics

USA . 76 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

$0.101

76

$0.103

-

-

$0.101

Corphita

USA . 2,144 parts In-Stock

1+ parts

$0.243

100+ parts

-

1k+ parts

-

10k+ parts

-

2,144

$0.243

-

-

-

Semicontronic

India . 2,635 parts In-Stock

1+ parts

$0.323

100+ parts

$0.315

1k+ parts

$0.313

10k+ parts

-

2,635

$0.323

$0.315

$0.313

-

Component Stockers USA

USA . 296 parts In-Stock

1+ parts

$0.440

100+ parts

$0.160

1k+ parts

-

10k+ parts

-

296

$0.440

$0.160

-

-

Aztec Data Supply Inc.

USA . 1,840 parts In-Stock

1+ parts

$0.511

100+ parts

-

1k+ parts

-

10k+ parts

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1,840

$0.511

-

-

-

Ampacity Inc.

Singapore . 2,646 parts In-Stock

1+ parts

$0.700

100+ parts

-

1k+ parts

-

10k+ parts

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2,646

$0.700

-

-

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TANS Electronics

Latvia . 3,768 parts In-Stock

1+ parts

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100+ parts

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3,768

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Infinite Electronics LLP (Excess)

. 2,813 parts In-Stock

1+ parts

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100+ parts

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2,813

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-

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SupplyDigital Components

Austria . 1,622 parts In-Stock

1+ parts

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100+ parts

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1,622

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-

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Problanco Electronics

Mexico . 1,459 parts In-Stock

1+ parts

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100+ parts

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1,459

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UHIMA Technologies

Türkiye . 659 parts In-Stock

1+ parts

-

100+ parts

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659

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Kulean Microsystems

USA . 177 parts In-Stock

1+ parts

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177

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Overview

Unleash the power of innovation with the NSVBCX17LT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that promises reliability and performance. Manufactured by the trusted name in semiconductor technology, this PNP transistor is ideal for a wide range of applications. With its single configuration and small outline package, this transistor offers seamless integration and high efficiency. Experience the value and benefits of this product, from its high collector-emitter voltage to its low power dissipation, making it the perfect choice for your electronic projects. Elevate your designs with the NSVBCX17LT1G and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, ideal for portable or small electronic devices.

Polarity or Channel Type: PNP

The PNP configuration allows for easier integration into circuits designed for PNP transistors, providing compatibility and flexibility in various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and operation, making the transistor easy to use for both beginners and experienced engineers.

Surface Mount: YES

The surface mount capability enables easy and efficient PCB assembly, saving time and effort during manufacturing processes.

Maximum Power Dissipation (Abs): 0.3 W

The high maximum power dissipation rating of 0.3W ensures reliable performance under various operating conditions, reducing the risk of overheating and damage.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 indicates good amplification capability, making the transistor suitable for signal amplification and switching applications.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating of 45V allows for use in circuits with higher voltage requirements, expanding the range of applications for the transistor.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance in challenging thermal environments, enhancing the transistor's overall durability and lifespan.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C enables operation in cold conditions, making the transistor suitable for a wide range of temperature-sensitive applications.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current rating of 0.5A allows for handling higher currents, making the transistor suitable for power switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBCX17LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSVBCX17LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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