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NSVBA114EDXV6T1G

Onsemi

NSVBA114EDXV6T1G by Onsemi

NSVBA114EDXV6T1G by Onsemi is a PNP BJT transistor for switching applications. It has 2 elements with built-in resistor, VCEsat of 0.25V, and hFE of 35. With a max VCE of 50V and IC of 0.1A, it operates b/w -55 to 150°C. Ideal for small outline packages in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.081

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,488 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

-

10k+ parts

$0.079

3,488

$0.470

-

-

$0.079

Rochester

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

$0.072

1k+ parts

$0.060

10k+ parts

$0.053

88,000

-

$0.072

$0.060

$0.053

DigiKey

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.090

88,000

-

-

-

$0.090

Verical

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.067

48,000

-

-

-

$0.067

Flip Electronics (Authorized)

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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36,000

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 279 parts In-Stock

1+ parts

$0.056

100+ parts

-

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279

$0.056

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Vyrian

USA . 2,188 parts In-Stock

1+ parts

$0.059

100+ parts

-

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2,188

$0.059

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Flip Electronics

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

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36,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,615 parts In-Stock

1+ parts

$0.053

100+ parts

-

1k+ parts

-

10k+ parts

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1,615

$0.053

-

-

-

Corohmni

South Africa . 204 parts In-Stock

1+ parts

$0.059

100+ parts

-

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10k+ parts

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204

$0.059

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-

Component Stockers USA

USA . 63,294 parts In-Stock

1+ parts

$0.090

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

63,294

$0.090

$0.090

$0.080

$0.080

Continental Prestige Electronics

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.110

10k+ parts

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40,000

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$0.110

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Perfect Parts

USA . 24,143 parts In-Stock

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24,143

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Problanco Electronics

Mexico . 4,610 parts In-Stock

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4,610

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Kulean Microsystems

USA . 3,457 parts In-Stock

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3,457

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SupplyDigital Components

Austria . 3,363 parts In-Stock

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3,363

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TANS Electronics

Latvia . 1,461 parts In-Stock

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1,461

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UHIMA Technologies

Türkiye . 478 parts In-Stock

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478

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Overview

Experience superior performance and reliability with the NSVBA114EDXV6T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for various switching applications. With its robust construction and innovative design, this PNP transistor offers customers unmatched value and benefits. Whether you're looking to enhance your electronic projects or streamline your manufacturing processes, the NSVBA114EDXV6T1G delivers exceptional results every time. Trust Onsemi's reputation for excellence and elevate your projects to new heights with this cutting-edge transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuit designs and enables compatibility with other PNP components.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

This configuration simplifies circuit design by providing two separate elements with a built-in resistor, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in high-frequency switching circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic devices.

Maximum VCEsat: 0.25 V

Low VCEsat value indicates minimal saturation voltage, leading to lower power dissipation and improved efficiency.

Package Shape: RECTANGULAR

Rectangular shape offers easy handling and installation in a variety of electronic devices and applications.

Terminal Form: FLAT

Flat terminals provide secure connections and ease of soldering during installation.

No. of Elements: 2

Having two elements allows for increased functionality and flexibility in circuit design.

No. of Terminals: 6

Having six terminals provides multiple connection points, enabling versatile integration into complex circuit layouts.

Maximum Power Dissipation (Abs): 0.5 W

With a high maximum power dissipation, this transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact designs in electronic devices.

Minimum DC Current Gain (hFE): 35

High minimum DC current gain ensures consistent and reliable amplification in a wide range of operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in extreme environments and ensures long-term durability.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating provides overvoltage protection and reliability in demanding applications.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and reliable performance over a wide temperature range.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature rating allows for reliable performance in cold environments or during startup conditions.

Maximum Collector Current (IC): 0.1 A

High maximum collector current rating enables the transistor to handle higher current loads, increasing its versatility in various applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and ensures reliable connections over the lifespan of the transistor.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connections, enhancing the overall reliability of the transistor in circuit applications.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand peak reflow temperatures for up to 30 seconds, making it suitable for reflow soldering processes in PCB assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature rating ensures the transistor's integrity during the soldering process, guaranteeing reliable connections and performance.

Reference Standard: AEC-Q101

Complies with the AEC-Q101 automotive industry standard, indicating high reliability and quality for automotive electronic applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBA114EDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BAIS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVBA114EDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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