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NSVBC847BTT1G

Onsemi

NSVBC847BTT1G by Onsemi

NSVBC847BTT1G by Onsemi is a NPN BJT transistor with max VCEsat of 0.6V, hFE of 200, and max IC of 0.1A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz. Suitable for surface mount designs with dual terminal position and matte tin finish.

Median Price

$0.056

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10,180 parts In-Stock

1+ parts

$0.320

100+ parts

$0.125

1k+ parts

$0.081

10k+ parts

$0.068

10,180

$0.320

$0.125

$0.081

$0.068

DigiKey

USA . 9,335 parts In-Stock

1+ parts

$0.340

100+ parts

$0.132

1k+ parts

$0.086

10k+ parts

$0.061

9,335

$0.340

$0.132

$0.086

$0.061

Future Electronics

Canada . 165,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.040

165,000

-

-

-

$0.040

Rochester

USA . 111,000 parts In-Stock

1+ parts

-

100+ parts

$0.056

1k+ parts

$0.046

10k+ parts

$0.041

111,000

-

$0.056

$0.046

$0.041

Verical

USA . 111,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.052

111,000

-

-

-

$0.052

Flip Electronics (Authorized)

USA . 54,421 parts In-Stock

1+ parts

-

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-

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54,421

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Distributors (In-Stock)

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Digiode

USA . 555 parts In-Stock

1+ parts

$0.044

100+ parts

-

1k+ parts

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555

$0.044

-

-

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Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$0.081

100+ parts

-

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72

$0.081

-

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IBS Electronics

USA . 138,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.091

138,000

-

-

-

$0.091

NAC Semi

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.114

72,000

-

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$0.114

Flip Electronics

USA . 54,421 parts In-Stock

1+ parts

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100+ parts

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54,421

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Vyrian

USA . 45,443 parts In-Stock

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45,443

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 37,835 parts In-Stock

1+ parts

$0.039

100+ parts

$0.038

1k+ parts

$0.038

10k+ parts

-

37,835

$0.039

$0.038

$0.038

-

Ampacity Inc.

Singapore . 37,815 parts In-Stock

1+ parts

$0.039

100+ parts

-

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37,815

$0.039

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Corphita

USA . 242 parts In-Stock

1+ parts

$0.041

100+ parts

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242

$0.041

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Corohmni

South Africa . 446 parts In-Stock

1+ parts

$0.046

100+ parts

-

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446

$0.046

-

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Argo Parts USA

USA . 2,798 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

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10k+ parts

$0.078

2,798

$0.081

-

-

$0.078

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

$0.077

10k+ parts

$0.075

2,000

$0.081

-

$0.077

$0.075

Continental Prestige Electronics

USA . 972 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

-

10k+ parts

$0.079

972

$0.081

-

-

$0.079

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.094

100+ parts

$0.086

1k+ parts

$0.081

10k+ parts

-

500

$0.094

$0.086

$0.081

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Aztec Data Supply Inc.

USA . 3,010 parts In-Stock

1+ parts

$0.980

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3,010

$0.980

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Perfect Parts

USA . 118,403 parts In-Stock

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118,403

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Eastek

USA . 39,000 parts In-Stock

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$0.060

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39,000

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$0.060

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GreenTree Electronics

Israel . 39,000 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 8,378 parts In-Stock

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Problanco Electronics

Mexico . 6,013 parts In-Stock

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SupplyDigital Components

Austria . 2,003 parts In-Stock

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TANS Electronics

Latvia . 1,311 parts In-Stock

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UHIMA Technologies

Türkiye . 767 parts In-Stock

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767

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Overview

Experience superior performance and reliability with the NSVBC847BTT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJT) like no other. Ideal for amplifier applications, this NPN transistor offers a maximum VCEsat of 0.6V and a minimum DC current gain of 200. With a maximum collector-emitter voltage of 45V and a maximum operating temperature of 150°C, this transistor is designed to meet your needs with precision. Trust Onsemi for cutting-edge technology and unmatched value in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material ensures product longevity and reliability.

Polarity or Channel Type: NPN

NPN configuration is commonly used and versatile for various applications.

Configuration: SINGLE

Simple and straightforward setup for easy integration into circuit designs.

Transistor Application: AMPLIFIER

Ideal for amplifying electronic signals with high fidelity and accuracy.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying assembly processes.

Maximum VCEsat: 0.6 V

Low voltage saturation minimizes power loss and enhances efficiency.

Package Shape: RECTANGULAR

Compact shape allows for efficient use of board space.

Terminal Form: GULL WING

Gull wing terminals provide secure connections for stable performance.

No. of Terminals: 3

Simplified pin configuration for straightforward circuit integration.

Maximum Power Dissipation (Abs): 0.3 W

Able to handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Slim profile suits designs with space constraints.

Minimum DC Current Gain (hFE): 200

High current gain ensures reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for operation in various environments.

Maximum Collector-Base Capacitance: 4.5 pF

Low capacitance minimizes signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 45 V

High voltage tolerance makes it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability.

Minimum Operating Temperature: -55 °C

Capable of functioning in harsh cold conditions without issues.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels for reliable operation.

Terminal Finish: MATTE TIN

Matte tin finish ensures secure solder connections for stable performance.

Terminal Position: DUAL

Dual terminal position for flexible circuit integration options.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for precise and reliable soldering during assembly processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature for secure solder joints and reliable connections.

Reference Standard: AEC-Q101

Complies with automotive industry standards for quality and reliability.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast signal switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC847BTT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

NSVBC847BTT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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