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NSVBC847BLT3G

Onsemi

NSVBC847BLT3G by Onsemi

NSVBC847BLT3G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 200, and IC of 0.1A. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and max operating temperature of 150°C.

Median Price

$0.086

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 400 parts In-Stock

1+ parts

$0.068

100+ parts

$0.035

1k+ parts

$0.028

10k+ parts

-

400

$0.068

$0.035

$0.028

-

Mouser Electronics

USA . 3,422 parts In-Stock

1+ parts

$0.340

100+ parts

$0.130

1k+ parts

$0.077

10k+ parts

$0.060

3,422

$0.340

$0.130

$0.077

$0.060

Newark

USA . 355 parts In-Stock

1+ parts

$0.358

100+ parts

$0.148

1k+ parts

$0.094

10k+ parts

-

355

$0.358

$0.148

$0.094

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DigiKey

USA . 3,940 parts In-Stock

1+ parts

$0.360

100+ parts

$0.138

1k+ parts

$0.090

10k+ parts

$0.060

3,940

$0.360

$0.138

$0.090

$0.060

Chip1Stop

Japan . 10,964 parts In-Stock

1+ parts

-

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10,964

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-

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Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.059

1k+ parts

$0.049

10k+ parts

$0.044

10,000

-

$0.059

$0.049

$0.044

Flip Electronics (Authorized)

USA . 9,870 parts In-Stock

1+ parts

-

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9,870

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Element14

Singapore . 7,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.105

10k+ parts

$0.091

7,850

-

-

$0.105

$0.091

Farnell

UK . 7,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.064

10k+ parts

$0.055

7,850

-

-

$0.064

$0.055

Verical

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.028

10k+ parts

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400

-

-

$0.028

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 644 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

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644

$0.039

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.077

100+ parts

-

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10

$0.077

-

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Vyrian

USA . 12,194 parts In-Stock

1+ parts

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12,194

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Flip Electronics

USA . 9,870 parts In-Stock

1+ parts

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9,870

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Martec Srl

Italy . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 11,973 parts In-Stock

1+ parts

$0.035

100+ parts

-

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11,973

$0.035

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Corphita

USA . 2,119 parts In-Stock

1+ parts

$0.037

100+ parts

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2,119

$0.037

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Corohmni

South Africa . 61 parts In-Stock

1+ parts

$0.049

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61

$0.049

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Argo Parts USA

USA . 1,781 parts In-Stock

1+ parts

$0.077

100+ parts

-

1k+ parts

-

10k+ parts

$0.074

1,781

$0.077

-

-

$0.074

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.077

100+ parts

-

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100

$0.077

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Component Stockers USA

USA . 612 parts In-Stock

1+ parts

$0.250

100+ parts

$0.090

1k+ parts

$0.040

10k+ parts

$0.040

612

$0.250

$0.090

$0.040

$0.040

Aztec Data Supply Inc.

USA . 4,379 parts In-Stock

1+ parts

$1.495

100+ parts

-

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4,379

$1.495

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.880

100+ parts

$1.861

1k+ parts

$1.786

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3,000

$1.880

$1.861

$1.786

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Perfect Parts

USA . 56,000 parts In-Stock

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56,000

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Kepictronics

USA . 50,000 parts In-Stock

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Continental Prestige Electronics

USA . 10,000 parts In-Stock

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$0.059

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$0.059

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Kulean Microsystems

USA . 5,618 parts In-Stock

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5,618

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TANS Electronics

Latvia . 5,407 parts In-Stock

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SupplyDigital Components

Austria . 3,095 parts In-Stock

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3,095

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Problanco Electronics

Mexico . 1,166 parts In-Stock

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1,166

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UHIMA Technologies

Türkiye . 636 parts In-Stock

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636

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Overview

Enhance your electronic designs with the NSVBC847BLT3G small signal bipolar junction transistor by Onsemi. Manufactured with top-notch quality and precision, this NPN transistor is ideal for a wide range of applications in various industries. With a maximum VCEsat of 0.6V and a minimum DC current gain of 200, this single configuration transistor offers exceptional performance and efficiency. Whether you're working on amplifiers, oscillators, or switching circuits, this transistor's high reliability and low power dissipation make it a valuable addition to your projects. Trust Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN type allows for high performance and efficiency in amplification circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easy to integrate into existing systems.

Surface Mount: YES

Surface mount capability saves space and allows for easy assembly on PCBs.

Maximum VCEsat: 0.6 V

Low VCE saturation voltage reduces power loss and improves efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and secure mounting on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connection for stable operation.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.3 W

With a high power dissipation limit, this transistor can handle high power applications effectively.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact designs.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures stable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in various environments without performance degradation.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance minimizes signal distortion and enhances high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides safety margin for voltage spikes and surges.

Transistor Element Material: SILICON

Silicon material ensures reliability, stability, and consistent performance over time.

Minimum Operating Temperature: -55 °C

Wide operating temperature range makes it suitable for both low and high-temperature environments.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, this transistor can handle higher current loads effectively.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good electrical conductivity and corrosion resistance for long-lasting performance.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connection in various circuit layouts.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency enables high-speed switching and efficient signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC847BLT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

NSVBC847BLT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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