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NSVBC850BLT1G

Onsemi

NSVBC850BLT1G by Onsemi

NSVBC850BLT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 200, and VCEmax of 45V. It is ideal for small signal applications in automotive electronics due to its AEC-Q101 certification and operating temperature range from -55°C to 150°C. The package style is small outline with Gull Wing terminals, making it suitable for surface mount assembly.

Median Price

$0.043

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,305 parts In-Stock

1+ parts

$0.270

100+ parts

$0.102

1k+ parts

$0.067

10k+ parts

$0.058

8,305

$0.270

$0.102

$0.067

$0.058

DigiKey

USA . 20,880 parts In-Stock

1+ parts

$0.280

100+ parts

$0.108

1k+ parts

$0.070

10k+ parts

$0.049

20,880

$0.280

$0.108

$0.070

$0.049

Flip Electronics (Authorized)

USA . 369,000 parts In-Stock

1+ parts

-

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-

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369,000

-

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Verical

USA . 123,000 parts In-Stock

1+ parts

-

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$0.032

123,000

-

-

-

$0.032

Rochester

USA . 49,020 parts In-Stock

1+ parts

-

100+ parts

$0.043

1k+ parts

$0.036

10k+ parts

$0.032

49,020

-

$0.043

$0.036

$0.032

Chip1Stop

Japan . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.040

12,000

-

-

-

$0.040

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 313 parts In-Stock

1+ parts

$0.033

100+ parts

-

1k+ parts

-

10k+ parts

-

313

$0.033

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.073

100+ parts

-

1k+ parts

-

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-

50

$0.073

-

-

-

Flip Electronics

USA . 462,000 parts In-Stock

1+ parts

-

100+ parts

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462,000

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Vyrian

USA . 113,965 parts In-Stock

1+ parts

-

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113,965

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IBS Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.071

12,000

-

-

-

$0.071

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 114,168 parts In-Stock

1+ parts

$0.030

100+ parts

-

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-

10k+ parts

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114,168

$0.030

-

-

-

Corphita

USA . 1,882 parts In-Stock

1+ parts

$0.032

100+ parts

-

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1,882

$0.032

-

-

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Corohmni

South Africa . 72 parts In-Stock

1+ parts

$0.035

100+ parts

-

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72

$0.035

-

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-

Component Stockers USA

USA . 77,225 parts In-Stock

1+ parts

$0.040

100+ parts

$0.030

1k+ parts

$0.030

10k+ parts

$0.030

77,225

$0.040

$0.030

$0.030

$0.030

Argo Parts USA

USA . 4,327 parts In-Stock

1+ parts

$0.073

100+ parts

-

1k+ parts

-

10k+ parts

$0.071

4,327

$0.073

-

-

$0.071

Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Continental Prestige Electronics

USA . 49,020 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.042

10k+ parts

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49,020

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-

$0.042

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Perfect Parts

USA . 23,520 parts In-Stock

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23,520

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SupplyDigital Components

Austria . 6,913 parts In-Stock

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6,913

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Kulean Microsystems

USA . 4,926 parts In-Stock

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4,926

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Problanco Electronics

Mexico . 2,583 parts In-Stock

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2,583

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TANS Electronics

Latvia . 1,869 parts In-Stock

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1,869

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Lixinc

USA . 1,617 parts In-Stock

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1,617

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UHIMA Technologies

Türkiye . 745 parts In-Stock

1+ parts

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745

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.072

1k+ parts

$0.069

10k+ parts

$0.068

50

-

$0.072

$0.069

$0.068

Overview

Upgrade your electronic devices with the high-quality NSVBC850BLT1G from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors (BJT) like this NPN transistor with a single configuration and Gull Wing terminal form. Ideal for applications requiring low power dissipation and high DC current gain, this transistor offers a maximum VCEsat of 0.6V and a nominal transition frequency of 100MHz. Trust Onsemi to provide reliable, efficient components for your projects. Elevate your designs with the NSVBC850BLT1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for various electronic circuits.

Configuration: SINGLE

Simplified circuit design with a single transistor, reducing complexity and ensuring ease of use.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum VCEsat: 0.6 V

Low VCEsat voltage helps in minimizing power loss and maximizing efficiency in circuit applications.

No. of Terminals: 3

Simplified connection with only 3 terminals, making it easier to integrate into circuit designs.

Maximum Power Dissipation (Abs): 0.3 W

With a high power dissipation capability, the transistor can handle a range of power levels without overheating.

Maximum Collector-Emitter Voltage: 45 V

Handles higher voltages, making it suitable for a wide range of applications that require higher voltage levels.

Nominal Transition Frequency (fT): 100 MHz

Higher transition frequency allows for faster switching speeds and better performance in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC850BLT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

NSVBC850BLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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