Loading...

NSVBC857CWT1G

Onsemi

NSVBC857CWT1G by Onsemi

NSVBC857CWT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.65V, hFE of 420, and max IC of 0.1A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz. Suitable for surface mount designs with matte tin finish and dual terminal position.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.085

100+ parts

$0.081

1k+ parts

$0.081

10k+ parts

-

50

$0.085

$0.081

$0.081

-

Newark

USA . 2 parts In-Stock

1+ parts

$0.177

100+ parts

$0.071

1k+ parts

$0.047

10k+ parts

-

2

$0.177

$0.071

$0.047

-

Mouser Electronics

USA . 4,064 parts In-Stock

1+ parts

$0.180

100+ parts

$0.078

1k+ parts

$0.043

10k+ parts

$0.038

4,064

$0.180

$0.078

$0.043

$0.038

Flip Electronics (Authorized)

USA . 2,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,690

-

-

-

-

Farnell

UK . 2 parts In-Stock

1+ parts

-

100+ parts

$0.067

1k+ parts

$0.037

10k+ parts

$0.033

2

-

$0.067

$0.037

$0.033

Element14

Singapore . 2 parts In-Stock

1+ parts

-

100+ parts

$0.098

1k+ parts

$0.048

10k+ parts

$0.047

2

-

$0.098

$0.048

$0.047

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,424 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

-

10k+ parts

-

1,424

$0.081

-

-

-

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$0.083

-

-

-

Flip Electronics

USA . 152,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

152,690

-

-

-

-

Pegasus Components GmbH

Germany . 53,437 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

53,437

-

-

-

-

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

6,000

-

-

-

$0.086

Vyrian

USA . 3,548 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,548

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 375 parts In-Stock

1+ parts

$0.021

100+ parts

-

1k+ parts

-

10k+ parts

-

375

$0.021

-

-

-

Semicontronic

India . 3,182 parts In-Stock

1+ parts

$0.022

100+ parts

$0.021

1k+ parts

$0.021

10k+ parts

-

3,182

$0.022

$0.021

$0.021

-

Ampacity Inc.

Singapore . 3,310 parts In-Stock

1+ parts

$0.027

100+ parts

-

1k+ parts

-

10k+ parts

-

3,310

$0.027

-

-

-

Corphita

USA . 2,153 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

-

2,153

$0.076

-

-

-

Argo Parts USA

USA . 2,978 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

2,978

$0.083

-

-

$0.080

Bastille Electronics

Australia . 800 parts In-Stock

1+ parts

$0.083

100+ parts

$0.079

1k+ parts

$0.075

10k+ parts

$0.074

800

$0.083

$0.079

$0.075

$0.074

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.085

100+ parts

$0.081

1k+ parts

$0.081

10k+ parts

-

50

$0.085

$0.081

$0.081

-

Continental Prestige Electronics

USA . 3,900 parts In-Stock

1+ parts

$0.258

100+ parts

$0.109

1k+ parts

$0.057

10k+ parts

$0.055

3,900

$0.258

$0.109

$0.057

$0.055

Aztec Data Supply Inc.

USA . 1,502 parts In-Stock

1+ parts

$1.119

100+ parts

-

1k+ parts

-

10k+ parts

-

1,502

$1.119

-

-

-

Kepictronics

USA . 306,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

306,000

-

-

-

-

Perfect Parts

USA . 23,868 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,868

-

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

TANS Electronics

Latvia . 8,155 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,155

-

-

-

-

Eastek

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.120

10k+ parts

-

6,000

-

-

$0.120

-

Problanco Electronics

Mexico . 5,575 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,575

-

-

-

-

Kulean Microsystems

USA . 4,902 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,902

-

-

-

-

SupplyDigital Components

Austria . 4,823 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,823

-

-

-

-

UHIMA Technologies

Türkiye . 139 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

139

-

-

-

-

Overview

Enhance your electronic projects with the high-quality NSVBC857CWT1G by Onsemi. Manufactured by a trusted industry leader, this Small Signal Bipolar Junction Transistor (BJT) is perfect for amplifier applications. With a PNP configuration and maximum VCEsat of 0.65V, it offers reliable performance in a compact package. Experience the benefits of its high DC current gain, low power dissipation, and wide operating temperature range. Trust Onsemi for top-notch products that deliver value and efficiency to customers across various industries. Upgrade your designs with the NSVBC857CWT1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

This PNP configuration allows for easy integration into existing circuit designs.

Configuration: SINGLE

Simplifies circuit design and layout, making it user-friendly for engineers.

Transistor Application: AMPLIFIER

Ideal for amplifier circuits, providing high gain and low noise operation.

Surface Mount: YES

Offers convenient placement on circuit boards, saving space and simplifying assembly processes.

Maximum VCEsat: 0.65V

Low VCEsat ensures minimal power loss and high efficiency in circuit operation.

Package Shape: RECTANGULAR

Easy to handle and integrate into circuit designs due to its rectangular shape.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering during assembly.

No. of Terminals: 3

A compact 3-terminal design for simple circuit connections and versatility in use.

Maximum Power Dissipation (Abs): 0.15W

Capable of dissipating heat efficiently to prevent overheating and ensure reliable performance.

Package Style (Meter): SMALL OUTLINE

Suitable for small-scale designs and compact electronic devices.

Minimum DC Current Gain (hFE): 420

High DC current gain ensures optimal performance and stability in amplifier circuits.

Maximum Operating Temperature: 150 °C

Able to operate reliably in high-temperature environments.

Maximum Collector-Base Capacitance: 4.5pF

Low capacitance minimizes signal distortion and ensures high-frequency response.

Maximum Collector-Emitter Voltage: 45V

Withstands high voltages for a wide range of applications.

Transistor Element Material: SILICON

Silicon material ensures consistent performance and reliability over time.

Minimum Operating Temperature: -55 °C

Capable of functioning in cold environments without compromising performance.

Maximum Collector Current (IC): 0.1A

Capable of handling moderate collector currents for various applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position for flexible mounting options and ease of circuit integration.

Maximum Time At Peak Reflow Temperature (s): 30

Suitable for reflow soldering processes with a short peak time for efficient assembly.

Peak Reflow Temperature °C: 260

Able to withstand high reflow temperatures without damage to the transistor.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 automotive reliability standards ensures high-quality and durability.

Nominal Transition Frequency (fT): 100MHz

High transitional frequency for fast switching and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC857CWT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

NSVBC857CWT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19