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NSVBC846BM3T5G

Onsemi

NSVBC846BM3T5G by Onsemi

NSVBC846BM3T5G by Onsemi is a NPN BJT with max power dissipation of 0.64W, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its single configuration, surface mount capability, and max collector current of 0.1A at an operating temperature up to 150°C.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 21,279 parts In-Stock

1+ parts

$0.280

100+ parts

$0.109

1k+ parts

$0.063

10k+ parts

$0.046

21,279

$0.280

$0.109

$0.063

$0.046

DigiKey

USA . 15,332 parts In-Stock

1+ parts

$0.300

100+ parts

$0.115

1k+ parts

$0.075

10k+ parts

$0.051

15,332

$0.300

$0.115

$0.075

$0.051

Arrow

USA . 8,000 parts In-Stock

1+ parts

-

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-

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$0.046

8,000

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$0.046

Flip Electronics (Authorized)

USA . 8,000 parts In-Stock

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8,000

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Verical

USA . 8,000 parts In-Stock

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$0.046

8,000

-

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$0.046

Farnell

UK . 7,730 parts In-Stock

1+ parts

-

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1k+ parts

$0.053

10k+ parts

$0.044

7,730

-

-

$0.053

$0.044

Element14

Singapore . 7,730 parts In-Stock

1+ parts

-

100+ parts

$0.102

1k+ parts

$0.062

10k+ parts

$0.042

7,730

-

$0.102

$0.062

$0.042

Rochester

USA . 6,020 parts In-Stock

1+ parts

-

100+ parts

$0.047

1k+ parts

$0.039

10k+ parts

$0.035

6,020

-

$0.047

$0.039

$0.035

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,936 parts In-Stock

1+ parts

$0.057

100+ parts

-

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1,936

$0.057

-

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Nova Conductors

Japan . 94 parts In-Stock

1+ parts

$0.071

100+ parts

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94

$0.071

-

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NAC Semi

USA . 48,000 parts In-Stock

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$0.052

48,000

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$0.052

Cyclops Electronics Ltd

UK . 15,440 parts In-Stock

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15,440

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Vyrian

USA . 9,678 parts In-Stock

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Flip Electronics

USA . 8,000 parts In-Stock

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8,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 9,514 parts In-Stock

1+ parts

$0.045

100+ parts

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9,514

$0.045

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Corohmni

South Africa . 481 parts In-Stock

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$0.053

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481

$0.053

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Corphita

USA . 1,205 parts In-Stock

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$0.054

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1,205

$0.054

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Argo Parts USA

USA . 1,800 parts In-Stock

1+ parts

$0.068

100+ parts

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1k+ parts

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10k+ parts

$0.066

1,800

$0.068

-

-

$0.066

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

$0.068

10k+ parts

$0.066

1,000

$0.071

-

$0.068

$0.066

Continental Prestige Electronics

USA . 7,750 parts In-Stock

1+ parts

$0.251

100+ parts

$0.110

1k+ parts

$0.038

10k+ parts

$0.037

7,750

$0.251

$0.110

$0.038

$0.037

Aztec Data Supply Inc.

USA . 1,292 parts In-Stock

1+ parts

$1.100

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1,292

$1.100

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Eastek

USA . 16,000 parts In-Stock

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Lixinc

USA . 15,687 parts In-Stock

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15,687

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Problanco Electronics

Mexico . 7,856 parts In-Stock

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iodParts Technologies Inc.

India . 7,190 parts In-Stock

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TANS Electronics

Latvia . 5,561 parts In-Stock

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SupplyDigital Components

Austria . 4,593 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 548 parts In-Stock

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548

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UHIMA Technologies

Türkiye . 81 parts In-Stock

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81

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Overview

Unleash the power of innovation with the NSVBC846BM3T5G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their Small Signal Bipolar Junction Transistors (BJT) like no other. With its NPN polarity and SINGLE configuration, this surface-mount transistor offers maximum power dissipation of 0.64W and a minimum DC current gain of 200, making it perfect for a wide range of applications. Experience high performance and efficiency with the NSVBC846BM3T5G, providing customers with unparalleled value and benefits for all their electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to work with in various applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 0.64 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures consistent amplification performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in a wide range of environmental conditions.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A allows for handling moderate current levels in circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and ensures reliable electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures that the transistor is not exposed to excessive heat during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures robust solder joints during the manufacturing process.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency enables this transistor to operate efficiently in high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC846BM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

NSVBC846BM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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