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NSVBA114YDXV6T1G

Onsemi

NSVBA114YDXV6T1G by Onsemi

NSVBA114YDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. It has a VCEsat of 0.25 V, max power dissipation of 0.5 W, and operates b/w -55 to 150 °C. Ideal for small outline applications requiring low collector-emitter voltage and current up to 0.1 A.

Median Price

$0.103

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.112

1k+ parts

$0.093

10k+ parts

$0.083

8,000

-

$0.112

$0.093

$0.083

DigiKey

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

8,000

-

-

-

$0.100

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.103

8,000

-

-

-

$0.103

Distributors (In-Stock)

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Digiode

USA . 1,874 parts In-Stock

1+ parts

$0.087

100+ parts

-

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1,874

$0.087

-

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Vyrian

USA . 565 parts In-Stock

1+ parts

$0.092

100+ parts

-

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565

$0.092

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,476 parts In-Stock

1+ parts

$0.083

100+ parts

-

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-

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2,476

$0.083

-

-

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Corohmni

South Africa . 196 parts In-Stock

1+ parts

$0.092

100+ parts

-

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196

$0.092

-

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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25,000

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Kepictronics

USA . 12,000 parts In-Stock

1+ parts

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12,000

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Continental Prestige Electronics

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.110

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8,000

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-

$0.110

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Kulean Microsystems

USA . 7,316 parts In-Stock

1+ parts

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7,316

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Problanco Electronics

Mexico . 7,301 parts In-Stock

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7,301

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TANS Electronics

Latvia . 6,194 parts In-Stock

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6,194

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Microchip USA

USA . 2,528 parts In-Stock

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2,528

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UHIMA Technologies

Türkiye . 289 parts In-Stock

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289

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SupplyDigital Components

Austria . 145 parts In-Stock

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145

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Overview

Enhance your electronic projects with the NSVBA114YDXV6T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor offers superior performance and reliability. With a compact package body material of PLASTIC/EPOXY, it is perfect for applications requiring precise control and efficient power management. Its built-in resistor adds convenience, making it ideal for various circuits. Experience the value and benefits of this product, from its low VCEsat to its high DC current gain, providing you with exceptional performance at an affordable price. Elevate your projects with the NSVBA114YDXV6T1G and unlock endless possibilities!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering flexibility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Offers convenience and space-saving design by having two separate elements with a built-in resistor, simplifying circuit integration.

Surface Mount: YES

Compatible with surface mount technology, allowing for easy and efficient PCB assembly.

Maximum VCEsat: 0.25 V

Low VCEsat helps minimize power loss and improve efficiency in circuit operation.

Package Shape: RECTANGULAR

Compact rectangular shape saves space on the PCB and facilitates efficient board layout.

Terminal Form: FLAT

Flat terminal form ensures secure connections and ease of soldering during assembly.

No. of Elements: 2

Having 2 elements provides versatility in circuit design and functionality.

No. of Terminals: 6

With 6 terminals, this transistor offers flexibility in connection options and circuit configurations.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels efficiently.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables high-density PCB designs.

Minimum DC Current Gain (hFE): 80

High minimum DC current gain ensures stable and reliable amplification in various applications.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for reliable operation in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low voltage applications where a maximum collector-emitter voltage of 50V is required.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability in transistor operation.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold environments down to -55 °C, making it versatile for various applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels efficiently.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides good solderability and resistance to corrosion.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options in different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable solder connections during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C allows for proper solder melting and bonding during assembly process.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBA114YDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVBA114YDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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