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NSVBC857BTT1G

Onsemi

NSVBC857BTT1G by Onsemi

NSVBC857BTT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.65V, hFE of 220, and fT of 100MHz. Ideal for amplifier applications, it has a max operating temperature of 150°C and collector-emitter voltage of 45V. Suitable for surface mount with matte tin finish in a small outline package.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 9,000 parts In-Stock

1+ parts

$0.319

100+ parts

$0.122

1k+ parts

$0.076

10k+ parts

$0.049

9,000

$0.319

$0.122

$0.076

$0.049

Mouser Electronics

USA . 174 parts In-Stock

1+ parts

$0.320

100+ parts

$0.125

1k+ parts

$0.081

10k+ parts

$0.061

174

$0.320

$0.125

$0.081

$0.061

Verical

USA . 12,000 parts In-Stock

1+ parts

-

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-

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$0.047

12,000

-

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$0.047

Chip1Stop

Japan . 9,000 parts In-Stock

1+ parts

-

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$0.051

9,000

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-

$0.051

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.081

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-

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50

$0.081

-

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Digiode

USA . 2,280 parts In-Stock

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$0.304

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2,280

$0.304

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Flip Electronics

USA . 96,000 parts In-Stock

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96,000

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Vyrian

USA . 9,428 parts In-Stock

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9,428

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NAC Semi

USA . 6,000 parts In-Stock

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$0.064

6,000

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$0.064

ComSIT Distribution GmbH

Germany . 3,139 parts In-Stock

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3,139

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ComSIT USA

USA . 3,139 parts In-Stock

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3,139

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Distributors (Availability)

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Semicontronic

India . 7,877 parts In-Stock

1+ parts

$0.040

100+ parts

$0.039

1k+ parts

$0.039

10k+ parts

-

7,877

$0.040

$0.039

$0.039

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Ampacity Inc.

Singapore . 7,818 parts In-Stock

1+ parts

$0.040

100+ parts

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7,818

$0.040

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Corohmni

South Africa . 469 parts In-Stock

1+ parts

$0.047

100+ parts

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469

$0.047

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.081

100+ parts

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2,000

$0.081

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Argo Parts USA

USA . 617 parts In-Stock

1+ parts

$0.081

100+ parts

-

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10k+ parts

$0.078

617

$0.081

-

-

$0.078

Continental Prestige Electronics

USA . 154 parts In-Stock

1+ parts

$0.081

100+ parts

-

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$0.079

154

$0.081

-

-

$0.079

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.094

100+ parts

$0.086

1k+ parts

$0.081

10k+ parts

-

3,000

$0.094

$0.086

$0.081

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Corphita

USA . 1,708 parts In-Stock

1+ parts

$0.288

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1,708

$0.288

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Aztec Data Supply Inc.

USA . 4,921 parts In-Stock

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$1.620

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4,921

$1.620

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Eastek

USA . 42,000 parts In-Stock

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$0.060

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42,000

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$0.060

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QUARKTWIN TECHNOLOGY LTD

USA . 25,656 parts In-Stock

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Perfect Parts

USA . 23,520 parts In-Stock

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Authorized Procurement Solutions

USA . 21,000 parts In-Stock

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TANS Electronics

Latvia . 7,592 parts In-Stock

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7,592

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Kulean Microsystems

USA . 6,674 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,002 parts In-Stock

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UHIMA Technologies

Türkiye . 834 parts In-Stock

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834

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SupplyDigital Components

Austria . 584 parts In-Stock

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584

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Overview

Enhance your electronic designs with the NSVBC857BTT1G by Onsemi, a top-tier manufacturer known for quality and reliability. As a PNP Small Signal Bipolar Junction Transistor, this component is ideal for amplifier applications, delivering superior performance and efficiency. With a high DC current gain of 220 and low VCEsat of 0.65V, you can trust in its precision and consistency. Whether you're working on consumer electronics or automotive systems, this transistor's compact design and robust construction make it a valuable asset for any project. Upgrade to Onsemi for unparalleled quality and innovation in every circuit.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to environmental factors, making this product reliable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits requiring PNP transistors.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio and signal amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards.

Maximum VCEsat: 0.65 V

Low VCEsat voltage minimizes power loss and improves efficiency in amplification tasks.

Package Shape: RECTANGULAR

Rectangular package shape enables easy placement and soldering onto circuit boards.

Terminal Form: GULL WING

Gull wing terminal form facilitates secure connections and reliable performance.

No. of Terminals: 3

3 terminals provide simplified connection options for circuit integration.

Maximum Power Dissipation (Abs): 0.3 W

Low power dissipation rating ensures that the transistor operates efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for compact designs.

Minimum DC Current Gain (hFE): 220

High minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables the transistor to function in diverse environmental conditions.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance minimizes signal distortion and improves overall performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 45 V

Sufficient maximum collector-emitter voltage rating allows for safe operation in various voltage conditions.

Transistor Element Material: SILICON

Silicon material provides high conductivity and reliability for long-lasting performance.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature rating ensures the transistor can function in harsh cold environments.

Maximum Collector Current (IC): 0.1 A

High maximum collector current rating allows for handling of moderate current levels in amplifier circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and reliable solder joint formation.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit board layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time at peak temperature ensures fast and efficient soldering process during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for effective and reliable solder joints to be formed during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency indicates fast switching speed and high-frequency performance for signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVBC857BTT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

NSVBC857BTT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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