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DTA114EUA-T106

ROHM

DTA114EUA-T106 by ROHM

ROHM's DTA114EUA-T106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.

Median Price

$0.036

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Verical

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Türkiye . 2,069 parts In-Stock

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Overview

Experience the reliability and performance of the DTA114EUA-T106 by ROHM, a top-of-the-line Small Signal Bipolar Junction Transistor. With its high-quality construction and innovative design, this PNP transistor with a built-in resistor is ideal for switching applications. Offering a maximum VCEsat of 0.3V and a minimum DC current gain of 68, this transistor delivers exceptional functionality and efficiency. Trust in ROHM's reputation for excellence and elevate your electronic projects with the DTA114EUA-T106.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, offering great versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice for compact designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient switching performance.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly of PCBs, making this transistor suitable for automated production processes.

Maximum VCEsat: 0.3 V

The low VCEsat voltage drop results in minimal power loss and high efficiency in switching applications.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50V allows for the transistor to be used in a wide range of voltage applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for the transistor to handle moderate current levels in various applications.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency of 250MHz indicates fast switching speeds and high frequency response, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA114EUA-T106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA114EUA-T106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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