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DTA115EUAT106

ROHM

DTA115EUAT106 by ROHM

ROHM DTA115EUAT106 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 82, and IC of 0.1A. Ideal for switching applications, it has a max operating temperature of 150°C and transition frequency of 250MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.091

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Mouser Electronics

USA . 1,929 parts In-Stock

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$0.250

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$0.140

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Chip1Stop

Japan . 4,680 parts In-Stock

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$0.058

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$0.056

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$0.053

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Verical

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Farnell

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$0.078

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Element14

Singapore . 959 parts In-Stock

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$0.130

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$0.076

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$0.056

959

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Cyclops Electronics Ltd

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Overview

Looking for a reliable and high-quality solution for your switching applications? Look no further than the DTA115EUAT106 by ROHM. This PNP bipolar junction transistor offers a single configuration with a built-in resistor, making it perfect for a wide range of electronic projects. With a maximum VCEsat of just 0.3V and a minimum DC current gain of 82, this transistor provides exceptional performance while handling up to 0.1A of collector current. Trust in ROHM's reputation for excellence and choose the DTA115EUAT106 for all your small signal BJT needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by eliminating the need for an external resistor.

Transistor Application: SWITCHING

Designed for fast switching speeds, making it ideal for applications requiring rapid on/off transitions.

Surface Mount: YES

Easily mountable on PCBs, reducing assembly time and improving reliability.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency in switching circuits.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering and ensures a strong connection with the PCB.

No. of Terminals: 3

Simplified connection setup for basic transistor circuits.

Maximum Power Dissipation (Abs): 0.2 W

Efficient power handling capability for small signal applications.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained designs.

Minimum DC Current Gain (hFE): 82

Consistent performance and reliability in amplification applications.

Maximum Operating Temperature: 150 °C

Suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 50 V

Can withstand relatively high voltages for various circuit configurations.

Transistor Element Material: SILICON

Silicon offers good performance characteristics and high reliability.

Maximum Collector Current (IC): 0.1 A

Adequate current handling capacity for small signal applications.

Terminal Finish: TIN SILVER COPPER

Durable finish for reliable electrical connections.

Terminal Position: DUAL

Allows for flexibility in circuit layouts and connections.

Maximum Time At Peak Reflow Temperature (s): 10

Ensures component reliability during assembly processes.

Peak Reflow Temperature °C: 260

Suitable for lead-free soldering processes.

Nominal Transition Frequency (fT): 250 MHz

High frequency response for applications requiring signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA115EUAT106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

82

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA115EUAT106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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