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DTA114EKAT246

ROHM

DTA114EKAT246 by ROHM

ROHM DTA114EKAT246 is a PNP BJT with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications, it operates up to 150°C with a max VCE of 50V. Its small outline package makes it suitable for surface mount designs.

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Atlantic Semiconductor

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AZTECH Wire

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Overview

Discover the powerful capabilities of the DTA114EKAT246 by ROHM, a high-quality Small Signal Bipolar Junction Transistor with a built-in resistor. Perfect for switching applications, this PNP transistor offers a low VCEsat of 0.3V and a DC current gain of 30, ensuring optimal performance in various electronic circuits. With its compact package style and reliable construction, this transistor is designed to provide customers with seamless integration and long-lasting functionality. Trust ROHM for cutting-edge technology that delivers exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and can save board space.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards.

Maximum VCEsat: 0.3 V

Low VCEsat reduces power dissipation and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape offers compatibility with standard PCB layouts and mounting processes.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Three terminals provide straightforward connectivity in circuits, simplifying integration.

Package Style (Meter): SMALL OUTLINE

Small outline package size saves space on the PCB and enables compact electronic designs.

Minimum DC Current Gain (hFE): 30

A higher DC current gain ensures reliable amplification and signal control in the circuit.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in a variety of environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable voltage rating for many common applications, ensuring compatibility.

Transistor Element Material: SILICON

Silicon material provides excellent performance characteristics and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for general purpose switching applications.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Quality terminal finish ensures reliable solder joints and long-term performance.

Terminal Position: DUAL

Dual terminal position allows for versatility in circuit connections and layout.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time ensures efficient assembly and minimizes heat exposure to the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for reliable soldering and assembly processes.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast response and switching speeds in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA114EKAT246 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA114EKAT246 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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