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DTA144EET1G

Onsemi

DTA144EET1G by Onsemi

Onsemi's DTA144EET1G is a PNP BJT with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and operates in the -55 to 150°C range. The small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.022

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 22,852 parts In-Stock

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$0.019

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22,852

$0.019

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Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$1.905

100+ parts

$1.734

1k+ parts

$1.562

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2,500

$1.905

$1.734

$1.562

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Rochester

USA . 69,983 parts In-Stock

1+ parts

-

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$0.021

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$0.018

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$0.016

69,983

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$0.021

$0.018

$0.016

DigiKey

USA . 69,983 parts In-Stock

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$0.040

69,983

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$0.040

Verical

USA . 63,000 parts In-Stock

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Mouser Electronics

USA . 31,699 parts In-Stock

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Flip Electronics (Authorized)

USA . 9,000 parts In-Stock

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Chip1Stop

Japan . 55 parts In-Stock

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$0.011

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55

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$0.011

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Digiode

USA . 1,178 parts In-Stock

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$0.021

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1,178

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Nova Conductors

Japan . 52 parts In-Stock

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$0.034

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52

$0.034

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Bristol Electronics

USA . 1,998 parts In-Stock

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$0.091

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$0.046

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$0.018

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$0.091

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$0.018

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Vyrian

USA . 25,284 parts In-Stock

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R&J Components

USA . 12,000 parts In-Stock

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Flip Electronics

USA . 9,000 parts In-Stock

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Sunrise Surplus Inc.

USA . 4,504 parts In-Stock

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Zilex Electronics Inc.

Canada . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,998 parts In-Stock

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Dan-Mar Components

USA . 1,998 parts In-Stock

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NexGen Digital

USA . 999 parts In-Stock

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Ampacity Inc.

Singapore . 25,204 parts In-Stock

1+ parts

$0.009

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Corohmni

South Africa . 488 parts In-Stock

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$0.011

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Corphita

USA . 1,170 parts In-Stock

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Component Stockers USA

USA . 91,125 parts In-Stock

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Bastille Electronics

Australia . 93 parts In-Stock

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93

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Argo Parts USA

USA . 3,350 parts In-Stock

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Continental Prestige Electronics

USA . 985 parts In-Stock

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985

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$1.905

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$1.734

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Perfect Parts

USA . 105,556 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 7,377 parts In-Stock

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Lixinc

USA . 6,102 parts In-Stock

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SupplyDigital Components

Austria . 4,877 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Kulean Microsystems

USA . 2,941 parts In-Stock

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Problanco Electronics

Mexico . 2,187 parts In-Stock

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Microchip USA

USA . 456 parts In-Stock

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UHIMA Technologies

Türkiye . 195 parts In-Stock

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Overview

Enhance your electronic circuits with the DTA144EET1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) perfect for switching applications. With its PNP polarity and built-in resistor, this transistor offers superior performance and reliability. Its compact design and Gull Wing terminal form make it easy to integrate into any project. Trust in Onsemi's expertise in semiconductor manufacturing to deliver a product that meets your needs with a maximum VCEsat of 0.25V and a minimum DC Current Gain of 80. Upgrade your electronics today with the DTA144EET1G and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Allows for easy integration into circuits that require PNP transistors, expanding the versatility of this product.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by eliminating the need for an external resistor, saving both space and time during assembly.

Transistor Application: SWITCHING

The transistor is optimized for switching applications, offering fast and efficient performance when switching between on and off states.

Surface Mount: YES

Enables easy and secure mounting onto circuit boards, facilitating a compact and reliable electrical connection.

Maximum VCEsat: 0.25 V

Low VCEsat minimizes power consumption and improves efficiency, making the transistor an energy-efficient choice.

Package Shape: RECTANGULAR

The rectangular shape allows for convenient and compact placement on a circuit board, optimizing space utilization.

Terminal Form: GULL WING

The gull wing terminals provide a secure connection to the circuit board, ensuring reliability and stability in operation.

No. of Terminals: 3

The three terminals enable simple and straightforward connections in a circuit, streamlining the installation process.

Maximum Power Dissipation (Abs): 0.3 W

With a high power dissipation rating, the transistor can handle higher loads and operate effectively under various conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA144EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

DTA144EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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