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DTA115EET1G

Onsemi

DTA115EET1G by Onsemi

DTA115EET1G by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.25V, making it suitable for switching applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.1A. This surface mount transistor comes in a rectangular package shape with gull wing terminals.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8,750 parts In-Stock

1+ parts

$0.180

100+ parts

$0.066

1k+ parts

$0.042

10k+ parts

$0.029

8,750

$0.180

$0.066

$0.042

$0.029

Mouser Electronics

USA . 6,727 parts In-Stock

1+ parts

$0.180

100+ parts

$0.067

1k+ parts

$0.040

10k+ parts

$0.034

6,727

$0.180

$0.067

$0.040

$0.034

Newark

USA . 20,655 parts In-Stock

1+ parts

$0.187

100+ parts

$0.073

1k+ parts

$0.049

10k+ parts

-

20,655

$0.187

$0.073

$0.049

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Arrow

USA . 33,000 parts In-Stock

1+ parts

-

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$0.018

33,000

-

-

-

$0.018

Verical

USA . 33,000 parts In-Stock

1+ parts

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33,000

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Chip1Stop

Japan . 33,000 parts In-Stock

1+ parts

-

100+ parts

$0.026

1k+ parts

$0.022

10k+ parts

$0.021

33,000

-

$0.026

$0.022

$0.021

Rochester

USA . 28,000 parts In-Stock

1+ parts

-

100+ parts

$0.046

1k+ parts

$0.038

10k+ parts

$0.034

28,000

-

$0.046

$0.038

$0.034

Farnell

UK . 20,805 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.034

10k+ parts

$0.029

20,805

-

-

$0.034

$0.029

Element14

Singapore . 20,805 parts In-Stock

1+ parts

-

100+ parts

$0.098

1k+ parts

$0.050

10k+ parts

$0.049

20,805

-

$0.098

$0.050

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,206 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

1,206

$0.024

-

-

-

TME

Poland . 5,985 parts In-Stock

1+ parts

$0.140

100+ parts

$0.061

1k+ parts

$0.036

10k+ parts

$0.028

5,985

$0.140

$0.061

$0.036

$0.028

Flip Electronics

USA . 186,000 parts In-Stock

1+ parts

-

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186,000

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-

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Vyrian

USA . 29,398 parts In-Stock

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29,398

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Nova Conductors

Japan . 700 parts In-Stock

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-

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700

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Distributors (Availability)

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Ampacity Inc.

Singapore . 29,341 parts In-Stock

1+ parts

$0.019

100+ parts

-

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-

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29,341

$0.019

-

-

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Corohmni

South Africa . 166 parts In-Stock

1+ parts

$0.022

100+ parts

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166

$0.022

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Corphita

USA . 1,747 parts In-Stock

1+ parts

$0.022

100+ parts

-

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1,747

$0.022

-

-

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Component Stockers USA

USA . 29,771 parts In-Stock

1+ parts

$0.190

100+ parts

$0.050

1k+ parts

$0.040

10k+ parts

$0.020

29,771

$0.190

$0.050

$0.040

$0.020

Aztec Data Supply Inc.

USA . 1,347 parts In-Stock

1+ parts

$0.375

100+ parts

-

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1,347

$0.375

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Perfect Parts

USA . 78,662 parts In-Stock

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78,662

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Kepictronics

USA . 33,000 parts In-Stock

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33,000

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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30,000

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Continental Prestige Electronics

USA . 27,625 parts In-Stock

1+ parts

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100+ parts

$0.040

1k+ parts

$0.027

10k+ parts

$0.017

27,625

-

$0.040

$0.027

$0.017

Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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Lixinc

USA . 19,976 parts In-Stock

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19,976

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Problanco Electronics

Mexico . 6,584 parts In-Stock

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6,584

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QUARKTWIN TECHNOLOGY LTD

USA . 4,235 parts In-Stock

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4,235

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Kulean Microsystems

USA . 2,864 parts In-Stock

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2,864

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Argo Parts USA

USA . 2,406 parts In-Stock

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2,406

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TANS Electronics

Latvia . 1,961 parts In-Stock

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1,961

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Assy Fe

Spain . 1,500 parts In-Stock

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1,500

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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1,200

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SupplyDigital Components

Austria . 899 parts In-Stock

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899

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UHIMA Technologies

Türkiye . 365 parts In-Stock

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365

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Introducing the DTA115EET1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that is set to revolutionize the switching applications industry. With its PNP polarity and single configuration, this transistor offers unparalleled performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, you can trust in the exceptional craftsmanship and advanced engineering that goes into every product they produce. Whether it's for industrial automation or consumer electronics, this surface-mount transistor guarantees optimal functionality and efficiency. Enjoy the benefits of its built-in resistor, low VCEsat of 0.25V, and maximum power dissipation of 0.3W. Don't settle for ordinary when you can have extraordinary with the DTA115EET1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the transistor suitable for various environments and applications.

Polarity or Channel Type: PNP

The PNP configuration allows for efficient current control and switching capabilities, making it suitable for a wide range of electronic devices.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces the need for additional components, saving space and enhancing convenience.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and reliable switching transitions, making it ideal for use in various electronic devices.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on circuit boards, allowing for efficient production and assembly processes.

Maximum VCEsat: 0.25 V

The low VCEsat ensures minimal voltage drop across the transistor, resulting in lower power dissipation and improved efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit board layouts, maximizing space utilization in compact electronic designs.

Terminal Form: GULL WING

The gull-wing terminal form provides strong mechanical stability and secure solder connections, ensuring reliable performance and ease of assembly.

No. of Elements: 1

With a single transistor element, this product offers simplicity in circuit design and reduces complexity in implementation.

No. of Terminals: 3

The three terminals ensure easy connectivity and allow for easy integration into various electronic circuits and systems.

Maximum Power Dissipation (Abs): 0.3 W

The high power dissipation capability allows this transistor to handle higher power levels without the risk of overheating, ensuring its reliability in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style provides compactness and space savings, making it suitable for applications where size reduction is crucial.

Minimum DC Current Gain (hFE): 80

With a minimum DC current gain of 80, this transistor offers excellent amplification capabilities, ensuring accurate signal reproduction in various electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures, providing reliability and stability in demanding environments.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating ensures the transistor's ability to handle higher voltage levels without breakdown, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

The silicon transistor element offers excellent electrical characteristics, providing high gain, low noise, and reliable performance in electronic circuits.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows this transistor to function reliably even in extreme cold environments, expanding its range of applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for various low-power applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring strong and reliable electrical connections.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit design and provides convenience during assembly and installation processes.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this transistor can withstand standard surface mount assembly processes without the risk of moisture-related damage.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures proper soldering and prevents thermal damage during the assembly process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating ensures compatibility with lead-free soldering processes, guaranteeing reliable assembly and long-term performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA115EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

DTA115EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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