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DTA144EKAT146

ROHM

DTA144EKAT146 by ROHM

ROHM DTA144EKAT146 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate at up to 150°C.

Median Price

$0.066

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Mouser Electronics

USA . 5,352 parts In-Stock

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DigiKey

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Verical

USA . 6,000 parts In-Stock

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Future Electronics

Canada . 3,000 parts In-Stock

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Chip1Stop

Japan . 2,595 parts In-Stock

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Farnell

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Element14

Singapore . 970 parts In-Stock

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NAC Semi

USA . 10,978 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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TME

Poland . 2,995 parts In-Stock

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$0.055

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Ashlea Components Ltd

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Rutronik

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Vyrian

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Diverse Electronics

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IBS Electronics

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ABC Electronics Ltd.

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PC Components Company LLC

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ECAB

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Bristol Electronics

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Continental Prestige Electronics

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Argo Parts USA

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Netroflash

USA . 50 parts In-Stock

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CoreStaff

Japan . 6,000 parts In-Stock

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Aztec Data Supply Inc.

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Perfect Parts

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Overview

Experience the reliability and performance of ROHM with the DTA144EKAT146, a high-quality PNP bipolar junction transistor designed for switching applications. With a built-in resistor and small outline package style, this transistor offers convenience and efficiency in circuit design. Whether you're working on electronics projects or industrial automation, the DTA144EKAT146 delivers outstanding value and dependable operation. Trust ROHM for innovative solutions that meet your needs and exceed your expectations. Elevate your designs with the DTA144EKAT146 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY is a durable and cost-effective material, making the product reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, offering more flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and can help save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, saving time and costs.

Maximum VCEsat: 0.3 V

Low VCEsat leads to lower power dissipation and higher efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, ideal for applications where space is limited.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering during assembly, ensuring a strong and reliable connection.

No. of Terminals: 3

Simplified 3-terminal design for straightforward integration into circuit layouts.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation helps in achieving energy efficiency and prevents overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for denser and more compact designs.

Maximum Power Dissipation Ambient: 0.2 W

The maximum ambient power dissipation rating ensures stable operation under various environmental conditions.

Minimum DC Current Gain (hFE): 68

High DC current gain ensures reliable signal amplification and switching performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the transistor suitable for various temperature conditions.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating provides robustness and reliability in high-voltage applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance in electronic devices.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many low-power switching applications.

Terminal Finish: TIN SILVER COPPER

Tin silver copper finish ensures good electrical conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and ease of connections.

Maximum Time At Peak Reflow Temperature (s): 10

Short time at peak reflow temperature minimizes thermal stress during soldering, enhancing product reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ideal for lead-free soldering processes.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency ensures fast switching speeds and reliable high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA144EKAT146 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA144EKAT146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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