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DTA113ZCAT116

ROHM

DTA113ZCAT116 by ROHM

ROHM DTA113ZCAT116 is a PNP BJT with VCEsat of 0.3V, hFE of 33, and IC of 0.1A. Ideal for switching applications, it operates up to 150°C with a max VCE of 50V. Its small outline package makes it suitable for compact designs requiring high-speed performance.

Median Price

$0.270

Lifecycle Status

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6

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1k+

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Mouser Electronics

USA . 2,975 parts In-Stock

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$0.270

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$0.105

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$0.077

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$0.042

2,975

$0.270

$0.105

$0.077

$0.042

DigiKey

USA . 991 parts In-Stock

1+ parts

$0.270

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$0.104

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$0.077

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$0.048

991

$0.270

$0.104

$0.077

$0.048

Chip1Stop

Japan . 800 parts In-Stock

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$0.077

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$0.065

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800

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$0.077

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Verical

USA . 100 parts In-Stock

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$0.817

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100

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$0.817

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Nova Conductors

Japan . 150 parts In-Stock

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150

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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100

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CoreStaff

Japan . 100 parts In-Stock

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$0.181

100+ parts

$0.071

1k+ parts

$0.061

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100

$0.181

$0.071

$0.061

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QUARKTWIN TECHNOLOGY LTD

USA . 25,673 parts In-Stock

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Argo Parts USA

USA . 2,455 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 757 parts In-Stock

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Overview

Enhance your electronic projects with the DTA113ZCAT116 by ROHM, a top-quality Small Signal Bipolar Junction Transistor. Designed with precision and expertise by the renowned manufacturer ROHM, this PNP transistor with a built-in resistor is ideal for switching applications. With a low VCEsat of 0.3V and a high DC current gain of 33, this transistor offers superior performance and reliability. Whether you're a hobbyist or a professional, this surface-mount transistor in a compact package will elevate your projects to new heights. Upgrade your circuits with the DTA113ZCAT116 and experience efficiency like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits that require PNP transistors, offering versatility in design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for smaller electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speed and efficient performance.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, making it ideal for mass production.

Maximum VCEsat: 0.3 V

The low VCEsat helps in reducing power loss and improving efficiency in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on the PCB and efficient use of space.

No. of Terminals: 3

Having 3 terminals simplifies the connection and integration of the transistor in the circuit.

Minimum DC Current Gain (hFE): 33

A higher minimum DC current gain ensures reliable and consistent performance in a variety of operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating provides flexibility in circuit design and operation.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and stability in various applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A allows for handling moderate power applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit layout and connections.

Nominal Transition Frequency (fT): 250 MHz

With a high nominal transition frequency, this transistor is suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA113ZCAT116 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

33

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA113ZCAT116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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