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DTA114EET1G

Onsemi

DTA114EET1G by Onsemi

DTA114EET1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 35. This small outline package with gull wing terminals operates up to 150°C, making it suitable for various electronic devices.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,905 parts In-Stock

1+ parts

$0.105

100+ parts

$0.052

1k+ parts

$0.034

10k+ parts

$0.021

4,905

$0.105

$0.052

$0.034

$0.021

Mouser Electronics

USA . 5,317 parts In-Stock

1+ parts

$0.160

100+ parts

$0.070

1k+ parts

$0.038

10k+ parts

$0.034

5,317

$0.160

$0.070

$0.038

$0.034

Newark

USA . 34,639 parts In-Stock

1+ parts

$0.166

100+ parts

$0.076

1k+ parts

$0.044

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-

34,639

$0.166

$0.076

$0.044

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DigiKey

USA . 1,822 parts In-Stock

1+ parts

$0.170

100+ parts

$0.063

1k+ parts

$0.040

10k+ parts

$0.028

1,822

$0.170

$0.063

$0.040

$0.028

Flip Electronics (Authorized)

USA . 231,000 parts In-Stock

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Avnet

USA . 93,000 parts In-Stock

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Rochester

USA . 64,297 parts In-Stock

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$0.020

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64,297

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$0.020

$0.017

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Farnell

UK . 35,189 parts In-Stock

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-

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$0.060

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$0.033

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$0.029

35,189

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$0.060

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Element14

Singapore . 34,639 parts In-Stock

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$0.043

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$0.042

34,639

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$0.042

Future Electronics

Canada . 24,000 parts In-Stock

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Verical

USA . 4,905 parts In-Stock

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$0.034

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$0.021

4,905

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$0.021

Chip1Stop

Japan . 3,425 parts In-Stock

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$0.019

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$0.012

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$0.011

3,425

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$0.012

$0.011

Distributors (In-Stock)

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TME

Poland . 5,510 parts In-Stock

1+ parts

$0.020

100+ parts

$0.015

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$0.014

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5,510

$0.020

$0.015

$0.014

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Digiode

USA . 946 parts In-Stock

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$0.024

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946

$0.024

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Bristol Electronics

USA . 19,743 parts In-Stock

1+ parts

$0.087

100+ parts

$0.043

1k+ parts

$0.017

10k+ parts

$0.011

19,743

$0.087

$0.043

$0.017

$0.011

Flip Electronics

USA . 231,000 parts In-Stock

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IBS Electronics

USA . 69,000 parts In-Stock

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$0.034

69,000

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$0.034

Vyrian

USA . 45,747 parts In-Stock

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Rebound Electronics

UK . 29,725 parts In-Stock

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ComSIT Distribution GmbH

Germany . 27,000 parts In-Stock

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ComSIT USA

USA . 27,000 parts In-Stock

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Dan-Mar Components

USA . 19,743 parts In-Stock

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Martec Srl

Italy . 10,340 parts In-Stock

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NAC Semi

USA . 9,000 parts In-Stock

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$0.078

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Cogito LLC

Ukraine . 8,470 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Distributors (Availability)

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Ampacity Inc.

Singapore . 46,644 parts In-Stock

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$0.014

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Corphita

USA . 1,707 parts In-Stock

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Component Stockers USA

USA . 163,363 parts In-Stock

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$0.020

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$0.010

163,363

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$0.020

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$0.010

Aztec Data Supply Inc.

USA . 589 parts In-Stock

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$0.653

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589

$0.653

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.742

100+ parts

$0.675

1k+ parts

$0.608

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500

$0.742

$0.675

$0.608

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Corohmni

South Africa . 224 parts In-Stock

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$0.816

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224

$0.816

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Eastek

USA . 462,000 parts In-Stock

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Perfect Parts

USA . 334,641 parts In-Stock

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Glotronic Ltd.

UK . 74,400 parts In-Stock

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Continental Prestige Electronics

USA . 63,710 parts In-Stock

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$0.018

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Kepictronics

USA . 42,000 parts In-Stock

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GreenTree Electronics

Israel . 42,000 parts In-Stock

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Lixinc

USA . 12,608 parts In-Stock

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Kulean Microsystems

USA . 4,940 parts In-Stock

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Problanco Electronics

Mexico . 4,850 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,935 parts In-Stock

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SupplyDigital Components

Austria . 1,978 parts In-Stock

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Argo Parts USA

USA . 1,408 parts In-Stock

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TANS Electronics

Latvia . 1,185 parts In-Stock

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Metaverse IC Inc.

Canada . 444 parts In-Stock

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Futuretech Components

Singapore . 300 parts In-Stock

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Authorized Procurement Solutions

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Aranea Global

USA . 50 parts In-Stock

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UHIMA Technologies

Türkiye . 18 parts In-Stock

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Overview

Enhance your electronic projects with the DTA114EET1G by Onsemi! As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers reliable and high-quality products. The DTA114EET1G, with its PNP polarity and built-in resistor configuration, is perfect for switching applications. Its compact size, maximum power dissipation of 0.3W, and maximum collector-emitter voltage of 50V make it versatile for various projects. Trust Onsemi's expertise and choose the DTA114EET1G for efficient performance and seamless integration into your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuits and systems.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies the circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for switching applications, making it efficient and reliable in turning on and off electronic signals.

Surface Mount: YES

Suitable for surface mount applications, providing ease of installation and potentially saving space on the PCB.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on the PCB and optimizes space usage.

Terminal Form: GULL WING

The gull wing terminal form enables easy and secure soldering onto the PCB.

Maximum Power Dissipation: 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate loads and operate reliably.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures stable and consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable operation in elevated temperature environments.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle moderate voltage requirements.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, ensuring consistent performance and durability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is suitable for low to moderate power applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and reliability, ensuring a secure connection on the PCB.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and connection options.

Maximum Time At Peak Reflow Temperature: 40s

With a maximum time at peak reflow temperature of 40 seconds, this transistor can withstand soldering processes effectively.

Peak Reflow Temperature: 260C

The peak reflow temperature of 260°C ensures proper soldering and reliability in high-temperature environments.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA114EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTA114EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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