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DTA114EKAT146

ROHM

DTA114EKAT146 by ROHM

ROHM DTA114EKAT146 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at max temp of 150°C with a collector-emitter voltage of 50V.

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Overview

Looking for a reliable solution for your switching applications? Look no further than the DTA114EKAT146 by ROHM. Known for their high-quality components, ROHM delivers top-notch performance and durability in every product. This PNP transistor with a built-in resistor is perfect for small signal amplification and switching tasks. With a low VCEsat of just 0.3V and a maximum collector current of 0.1A, this transistor offers exceptional efficiency and reliability. Trust ROHM to provide you with the tools you need for success in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability.

Polarity or Channel Type: PNP

PNP configuration is suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient performance.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs.

Maximum VCEsat: 0.3 V

Low VCEsat ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and soldering on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering.

Maximum Power Dissipation (Abs): 0.2 W

High power dissipation capability ensures reliable operation under varying conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB.

Maximum Power Dissipation Ambient: 0.2 W

Efficient power dissipation in ambient conditions ensures stable performance.

Minimum DC Current Gain (hFE): 68

High DC current gain ensures consistent and reliable amplification.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating provides added reliability and safety margin.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor operation.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate collector current for a variety of applications.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 10

Short time at peak reflow temperature protects the transistor during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures reliable solder joints.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA114EKAT146 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA114EKAT146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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