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DTA114YETL

ROHM

DTA114YETL by ROHM

ROHM DTA114YETL is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at max temp of 150°C with peak reflow temp of 260°C, making it suitable for high-frequency switching tasks.

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$0.152

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Overview

Discover the innovative DTA114YETL by ROHM, a high-quality Small Signal Bipolar Junction Transistor with a PNP configuration and built-in resistor. Perfect for switching applications, this transistor offers exceptional performance and reliability with a low VCEsat of 0.3V. With a compact design and dual terminal position, this product is ideal for a wide range of electronic devices. Trust in ROHM's expertise and elevate your projects with the DTA114YETL's superior value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications and offer high current gain, making them a reliable choice for various circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor efficient for compact electronic devices.

Transistor Application: SWITCHING

This transistor is designed specifically for switching applications, offering fast switching speeds and low power dissipation for efficient performance.

Surface Mount: YES

Being surface-mountable makes this transistor easy to install on circuit boards, saving time during production and ensuring a secure connection.

Maximum VCEsat: 0.3 V

The low saturation voltage of 0.3V reduces power loss and provides efficient operation for the transistor, ensuring minimal heat generation.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement on the circuit board, making it convenient for assembly and layout design.

Terminal Form: GULL WING

The gull wing terminals offer secure connections and easy soldering, ensuring reliable performance in various electronic applications.

No. of Terminals: 3

With three terminals, this transistor is versatile and can be easily integrated into different circuit configurations for enhanced functionality.

Maximum Power Dissipation (Abs): 0.15 W

The low absolute power dissipation of 0.15W ensures energy efficiency and prevents overheating, making the transistor a reliable choice for long-term use.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making this transistor ideal for compact electronic devices with limited room for components.

Maximum Power Dissipation Ambient: 0.15 W

The low power dissipation in ambient conditions of 0.15W ensures stable performance and prevents the transistor from overheating, ensuring longevity.

Minimum DC Current Gain (hFE): 68

With a minimum DC current gain of 68, this transistor provides high amplification capabilities, making it suitable for a wide range of signal amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable performance in various conditions.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage of 50V allows the transistor to handle high voltage applications, making it a versatile choice for a variety of circuit designs.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, making this transistor a durable and long-lasting choice for electronic applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows the transistor to handle moderate current loads, making it suitable for a wide range of electronic applications.

Terminal Position: DUAL

The dual terminal position allows for flexible installation options, providing versatility in circuit board layout and design.

Maximum Time At Peak Reflow Temperature (s): 10

The 10-second maximum time at peak reflow temperature ensures safe and efficient soldering during the manufacturing process, guaranteeing a secure connection.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand the high temperatures of the soldering process, ensuring reliable solder joints for long-term use.

Nominal Transition Frequency (fT): 250 MHz

With a nominal transition frequency of 250MHz, this transistor offers fast switching speeds and high-frequency performance, making it suitable for demanding applications that require quick signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA114YETL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA114YETL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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