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DTA143EKAT146

ROHM

DTA143EKAT146 by ROHM

ROHM DTA143EKAT146 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Offers high reliability in surface mount designs with a max operating temperature of 150°C.

Median Price

$0.104

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Future Electronics

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Verical

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Overview

Looking for a high-quality, reliable Small Signal BJT? Look no further than the DTA143EKAT146 by ROHM. With its PNP polarity, single configuration, and built-in resistor, this transistor is perfect for switching applications. Its low VCEsat of 0.3V and high DC current gain ensure optimal performance. Plus, with a maximum collector-emitter voltage of 50V and a compact gull wing package shape, this transistor offers great value and versatility. Trust ROHM for your electronic component needs and experience the benefits of superior quality and performance with the DTA143EKAT146.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for a variety of uses.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies the circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Suitable for surface mount assembly, making it easier to integrate into electronic circuits.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss in switching applications, improving overall efficiency.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used and easy to handle during assembly.

Terminal Form: GULL WING

Gull wing terminals are suitable for surface mount assembly and offer good mechanical strength.

No. of Terminals: 3

Three terminals provide necessary connections for efficient operation in a circuit.

Maximum Power Dissipation (Abs): 0.2 W

Able to dissipate up to 0.2W of power, ensuring reliability under operating conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is compatible with modern PCB designs.

Maximum Power Dissipation Ambient: 0.2 W

0.2W maximum power dissipation under ambient conditions ensures reliable performance.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures stable and predictable amplification.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150°C, suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, it can handle a variety of voltage levels.

Transistor Element Material: SILICON

Silicon offers good performance and reliability, making it a popular choice for transistors.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1A of collector current, suitable for many low power applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and PCB layout.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperature for up to 10 seconds, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper soldering and reliability under assembly conditions.

Nominal Transition Frequency (fT): 250 MHz

With a high nominal transition frequency, this transistor is suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA143EKAT146 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA143EKAT146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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