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DTA114EE-TL

ROHM

DTA114EE-TL by ROHM

ROHM DTA114EE-TL is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 250MHz. The transistor comes in a small outline package with GULL WING terminals.

Median Price

$0.193

Lifecycle Status

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13

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1k+

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Mouser Electronics

USA . 6,507 parts In-Stock

1+ parts

$0.280

100+ parts

$0.107

1k+ parts

$0.070

10k+ parts

$0.043

6,507

$0.280

$0.107

$0.070

$0.043

DigiKey

USA . 7,499 parts In-Stock

1+ parts

$0.300

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$0.113

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$0.074

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$0.052

7,499

$0.300

$0.113

$0.074

$0.052

Chip1Stop

Japan . 57,956 parts In-Stock

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-

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$0.106

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$0.070

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$0.051

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$0.070

$0.051

Verical

USA . 12,000 parts In-Stock

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$0.065

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$0.065

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NAC Semi

USA . 2,964,000 parts In-Stock

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$0.031

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$0.031

ComSIT Distribution GmbH

Germany . 162,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 66,000 parts In-Stock

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R&J Components

USA . 6,000 parts In-Stock

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EMSNET

USA . 2,992 parts In-Stock

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Bristol Electronics

USA . 1,903 parts In-Stock

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Legend Electronics Inc.

USA . 1,000 parts In-Stock

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Prism Electronics

USA . 575 parts In-Stock

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Nova Conductors

Japan . 74 parts In-Stock

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Ampacity Inc.

Singapore . 50,134 parts In-Stock

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$0.033

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$0.033

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CoreStaff

Japan . 13,812 parts In-Stock

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$0.092

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$0.042

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$0.036

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Perfect Parts

USA . 1,285,560 parts In-Stock

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Eastek

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GreenTree Electronics

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Kepictronics

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Epart123

USA . 21,000 parts In-Stock

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Argo Parts USA

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Assy Fe

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Authorized Procurement Solutions

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Cyclops Electronics Ltd (Excess)

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Continental Prestige Electronics

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Aranea Global

USA . 100 parts In-Stock

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Overview

Discover the next level of performance with the DTA114EE-TL by ROHM. As a leading manufacturer in the industry, ROHM delivers top-quality Small Signal Bipolar Junction Transistors that are perfect for switching applications. With a single configuration and built-in resistor, this PNP transistor offers a seamless solution for your electronic needs. Experience the benefits of low VCEsat, high DC current gain, and a wide operating temperature range. Trust ROHM to provide reliable, efficient components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for long-term usage.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications, making this product ideal for switching high currents.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making integration easier and more efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and efficient operation in electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Maximum VCEsat: 0.3 V

Low VCEsat ensures minimal power loss and high efficiency in switching applications, resulting in energy savings.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates easy placement and alignment on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and solder joint reliability, enhancing the overall durability of the transistor.

Maximum Power Dissipation (Abs): 0.15 W

With a low power dissipation, this transistor operates efficiently without overheating, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices.

Maximum Power Dissipation Ambient: 0.15 W

Maintaining a consistent power dissipation under various ambient conditions ensures stable performance and longevity of the transistor.

Minimum DC Current Gain (hFE): 68

A minimum hFE of 68 indicates good amplification capabilities, allowing for accurate signal processing in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand demanding environments and operate reliably under stress.

Maximum Collector-Emitter Voltage: 50 V

The high maximum VCE voltage rating provides protection against voltage spikes and ensures safe operation in various circuit configurations.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making this transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle medium to low current levels in circuit operations.

Terminal Position: DUAL

Dual terminal position allows for flexible orientation and placement on the circuit board, enhancing design versatility.

Case Connection: COLLECTOR

The collector case connection simplifies circuit layout and enhances thermal management for optimal performance.

Maximum Time At Peak Reflow Temperature (s): 10

The short reflow time ensures quick and efficient soldering processes, reducing assembly time and improving productivity.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the heat from soldering processes without damage or degradation.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency enables fast signal switching and processing, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA114EE-TL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA114EE-TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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