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NSVMMUN2113LT3G

Onsemi

NSVMMUN2113LT3G by Onsemi

NSVMMUN2113LT3G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications in automotive electronics due to AEC-Q101 certification and built-in resistor configuration. Operating temperature range from -55 to 150 °C ensures reliable performance in various environments.

Median Price

$0.026

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 360 parts In-Stock

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$0.026

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360

$0.026

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Chip1Stop

Japan . 7,300 parts In-Stock

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$0.043

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7,300

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$0.043

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Verical

USA . 360 parts In-Stock

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$0.026

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360

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$0.026

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Distributors (In-Stock)

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Digiode

USA . 2,366 parts In-Stock

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$0.025

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Chip Stock

USA . 57,000 parts In-Stock

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Vyrian

USA . 11,897 parts In-Stock

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Corphita

USA . 1,220 parts In-Stock

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$0.023

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$0.023

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Corohmni

South Africa . 237 parts In-Stock

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$0.026

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237

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AZTECH Wire

Italy . 442 parts In-Stock

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$9.290

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442

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Perfect Parts

USA . 23,965 parts In-Stock

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Kulean Microsystems

USA . 8,261 parts In-Stock

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SupplyDigital Components

Austria . 5,779 parts In-Stock

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TANS Electronics

Latvia . 2,956 parts In-Stock

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Problanco Electronics

Mexico . 876 parts In-Stock

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UHIMA Technologies

Türkiye . 710 parts In-Stock

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Overview

Experience superior performance and reliability with the NSVMMUN2113LT3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJT) that are perfect for switching applications. With a built-in resistor, this PNP transistor ensures seamless operation and efficiency. Its compact design and gull wing terminals make it easy to install, while the maximum VCEsat of 0.25V guarantees optimal power dissipation. Trust Onsemi for high-quality components that meet your needs and exceed your expectations. Upgrade your electronics with the NSVMMUN2113LT3G and enjoy unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and allows for a compact design, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this product versatile for different circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, providing convenience for users.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control current flow in electronic circuits.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient PCB assembly, reducing overall manufacturing costs.

Maximum VCEsat: 0.25 V

With a low VCEsat value, this transistor minimizes power loss and improves overall efficiency in switching operations.

Package Shape: RECTANGULAR

The rectangular shape of the package offers easy mounting and secure placement on the PCB, enhancing reliability.

Terminal Form: GULL WING

The gull wing terminal form facilitates soldering and provides strong mechanical support, ensuring a reliable electrical connection.

No. of Terminals: 3

With three terminals, this transistor is easy to integrate into circuit designs and offers flexibility in connections.

Maximum Power Dissipation (Abs): 0.4 W

The high power dissipation capacity of this transistor allows it to handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and enables compact designs in electronic devices.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures consistent and reliable amplification in signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions, ensuring long-term reliability.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides a wide voltage handling range, making this transistor suitable for various applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and efficiency, making them ideal for various electronic devices.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor can operate in extreme cold conditions, providing versatility for different environments.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating indicates the current-handling capability of the transistor, making it suitable for low to moderate current applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish offers good solderability and reliable electrical connections, ensuring the long-term performance of the transistor.

Terminal Position: DUAL

A dual terminal position provides flexibility in PCB layout and improves the stability of the electrical connections in the circuit.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that the transistor meets automotive-grade quality and reliability requirements, making it suitable for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMUN2113LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVMMUN2113LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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