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DTC143TSATP

ROHM

DTC143TSATP by ROHM

ROHM DTC143TSATP is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications with max operating temp of 150°C. Package style: IN-LINE, terminal form: THROUGH-HOLE, and terminal finish: TIN SILVER COPPER.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 9,360 parts In-Stock

1+ parts

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9,360

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Ampacity Inc.

Singapore . 591 parts In-Stock

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$6.050

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591

$6.050

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AZTECH Wire

Italy . 120 parts In-Stock

1+ parts

$9.680

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120

$9.680

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience the superior quality and reliability of the DTC143TSATP by ROHM, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) is designed for switching applications, offering a built-in resistor for added convenience. With a low VCEsat of 0.3V and high DC current gain of 100, this NPN transistor provides efficient performance and precise control. Whether you're working on electronics projects or industrial applications, the DTC143TSATP delivers unmatched value and versatility. Trust ROHM for top-notch components that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance in a wide range of applications.

Maximum VCEsat: 0.3 V

Low VCEsat voltage helps in reducing power dissipation and improving efficiency in switching applications.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels effectively without overheating.

Minimum DC Current Gain (hFE): 100

The high DC current gain of 100 ensures reliable and consistent performance in amplification and switching tasks.

Maximum Collector-Emitter Voltage: 50 V

The 50 V maximum collector-emitter voltage rating makes this transistor suitable for low to moderate voltage circuit applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels in various circuit configurations.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency of 250 MHz enables this transistor to perform well in high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC143TSATP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTC143TSATP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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