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DTC114GUAT106

ROHM

DTC114GUAT106 by ROHM

ROHM DTC114GUAT106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.

Median Price

$0.066

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Overview

Discover the exceptional quality and reliability of the DTC114GUAT106 by ROHM, a leading manufacturer in the industry. As part of the Small Signal Bipolar Junction Transistors category, this NPN transistor with built-in resistor is perfect for switching applications. Its compact design, high performance, and low VCEsat of 0.3V make it an ideal choice for efficient circuitry. With a maximum collector-emitter voltage of 50V and maximum collector current of 0.1A, this transistor offers superior functionality and durability. Trust ROHM to deliver cutting-edge technology that exceeds expectations. Upgrade your electronic designs with the DTC114GUAT106 and experience unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures good durability and protection for the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used and offer good amplification properties.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for efficient switching applications with minimal power loss.

Surface Mount: YES

Surface mount packaging allows for easy and automated assembly onto PCBs.

Maximum VCEsat: 0.3 V

Low VCEsat helps in reducing power consumption and heat dissipation in the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and routing on the PCB.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable solder connections.

No. of Terminals: 3

3 terminals ease the connection and integration of the transistor in the circuit.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation rating ensures the transistor operates within safe limits.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the PCB and allows for dense circuit layouts.

Maximum Power Dissipation Ambient: 0.2 W

Ensures stable and reliable performance under normal operating conditions.

Minimum DC Current Gain (hFE): 30

Minimum DC current gain of 30 ensures proper amplification in the circuit.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Maximum VCE rating of 50V suitable for various voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material offers good conductivity and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Maximum collector current rating of 0.1A meets the requirements of many applications.

Terminal Finish: TIN SILVER COPPER

Tin-silver-copper finish provides excellent solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position makes it easy to mount and connect the transistor in the circuit.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for up to 10 seconds during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper solder reflow and joint reliability.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency of 250MHz allows for fast switching and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC114GUAT106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTC114GUAT106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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