Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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BFN19H6327XTSA1
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PSSO-F3;
COLLECTOR
.2 A
300 V
SINGLE
30
R-PSSO-F3
e3
1
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
PNP
AEC-Q101
YES
TIN
FLAT
SWITCHING
SILICON
100 MHz
UML6NTR
ROHM
ROHM's UML6NTR is a NPN BJT with built-in diode for switching applications. It has 5 terminals, max power dissipation of 0.12W, and max collector current of 0.5A. With a transition frequency of 320MHz, it operates at up to 150°C and has a max collector-emitter voltage of 12V.
.5 A
12 V
SINGLE WITH BUILT-IN DIODE
270
R-PDSO-G5
e2
5
150 Cel
260
NPN
.12 W
Not Qualified
Other Transistors
TIN COPPER
GULL WING
DUAL
10
320 MHz
UMF6NTR
ROHM's UMF6NTR is a PNP BJT transistor with 270 min hFE, 260 MHz fT, and 0.5 A IC. Ideal for switching applications, it has a max operating temperature of 150°C and a package style of small outline.
BUILT IN 2SA2018 AND 2SK3019
SINGLE WITH BUILT-IN FET AND DIODE
R-PDSO-G6
6
.15 W
260 MHz
DTA114TMT2L
ROHM's DTA114TMT2L is a PNP BJT with built-in resistor for switching applications. Features include 100 min hFE, 50V VCEO, and 250MHz fT. Its small outline package and surface mount capability make it ideal for compact electronic designs.
BUILT-IN BIAS RESISTOR
.1 A
50 V
SINGLE WITH BUILT-IN RESISTOR
100
R-PDSO-F3
BIP General Purpose Small Signal
250 MHz
DTC123EMT2L
ROHM's DTC123EMT2L is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and nominal transition frequency of 250MHz. Ideal for surface mount designs in small outline packages.
BUILT-IN BIAS RESISTOR RATIO IS 1
20
STBV42
STMicroelectronics
STBV42 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1W and max. collector current of 1A, suitable for low-power circuits in various electronic devices. The package style is cylindrical with matte tin terminal finish, making it easy to integrate into through-hole PCB designs.
1 A
400 V
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
1 W
NO
MATTE TIN
THROUGH-HOLE
BOTTOM
STBV45
STBV45 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.75A. It has a min. DC current gain of 5, suitable for switching applications with max. power dissipation of 0.95W in cylindrical package shape.
.75 A
.95 W
STBV68
STBV68 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.6A, ideal for switching applications. It has a min DC current gain of 3 and can handle up to 0.9W power dissipation, suitable for through-hole mounting in various electronic circuits at temperatures up to 150 °C.
.6 A
.9 W
DZT651-13
Diodes Incorporated
Small Signal Bipolar Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Qualification: Not Qualified;
NSBC143TPDXV6T5G
Onsemi
NSBC143TPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor for switching applications. Features include max. collector-emitter voltage of 50V, min. DC current gain of 160 (hFE), and max. power dissipation of 0.5W in a small outline package suitable for surface mount technology.
BUILT IN BIAS RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
160
R-PDSO-F6
2
NPN AND PNP
.5 W
BCR183TE6327
Infineon's BCR183TE6327 is a PNP BJT with max. power dissipation of 0.25W, min. DC current gain of 30, and max. collector current of 0.1A. Ideal for surface mount applications in electronics due to its silicon transistor element material and peak reflow temp of 260°C.
.25 W
VT6X1T2R
ROHM's VT6X1T2R is a NPN BJT with 2 elements, ideal for switching applications. It has a max power dissipation of 0.15W, hFE of 120, and fT of 400MHz. With a max collector-emitter voltage of 20V and max collector current of 0.2A, it operates up to 150°C making it suitable for various electronic designs.
20 V
SEPARATE, 2 ELEMENTS
120
400 MHz
EMF5XV6T5G
The Onsemi EMF5XV6T5G is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, 0.1A max collector current, and 0.5W power dissipation. Ideal for applications requiring compact design and high DC current gain (hFE) in electronic circuits.
BUILT IN BIAS RESISTOR RATIO 1
80
DCX4710H-7
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
35
LMN200B02-7
Small Signal Bipolar Transistors; Qualification: Not Qualified; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
2STL1525
2STL1525 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, a collector current of up to 5A, and operates at temperatures up to 150 °C. Its cylindrical package ensures easy integration in various circuits.
5 A
25 V
120 MHz
DDC144NS-7
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
.2 W
2STX2220
2STX2220 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, a collector current of 1.5A, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.
1.5 A
200
MMJT9410T1G
MMJT9410T1G by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small signal applications in electronics due to its high DC current gain and low collector current. Suitable for surface mount designs requiring compact packaging and efficient heat dissipation.
.01 A
30 V
60
R-PDSO-G3
3 W
72 MHz
NSBC114EPDXV6T5G
NSBC114EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.5W, and can operate at up to 150 °C. Suitable for surface mount designs in various electronic circuits.
BUILT IN BIAS RESISTOR RATIO IS 1
NSBC114YPDXV6T5G
NSBC114YPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, 2 elements with built-in resistor. It has a max power dissipation of 0.5W, hFE of 80, and can handle up to 50V collector-emitter voltage. Ideal for switching applications in surface mount designs due to its compact rectangular package style.
BUILT IN BIAS RESISTOR RATIO IS 4.7
NSBC124EPDXV6T5G
NSBC124EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistors, max power dissipation of 0.5W, and can operate b/w -55 to 150 °C. Suitable for surface mount designs in various electronic circuits.
BUILT IN BIAS RESISTANCE RATIO IS 1
-55 Cel
NSBC144EPDXV6T5G
NSBC144EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors, a max power dissipation of 0.5W, and can operate at temperatures up to 150 °C. This transistor has a collector-emitter voltage of 50V and a collector current of 0.1A, making it suitable for various electronic circuits requiring low-power amplification or switching functions in compact designs.
HBDM60V600W-7
Diodes Inc.'s HBDM60V600W-7 is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 0.5A collector current at 65V. With a transition frequency of 100MHz, it's ideal for high-frequency applications in electronics requiring small outline packages.
65 V
DDTC113TLP-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BUILT-IN BIAS RESISTOR, HIGH RELIABILITY
R-PDSO-N3
e4
NICKEL PALLADIUM GOLD
NO LEAD
ULN2004ADG4
Texas Instruments
ULN2004ADG4 by Texas Instruments is a NPN BJT with 7 elements, 0.5A IC, and 50V VCE. It is used for switching applications in surface mount designs due to its GULL WING terminals and small outline package style. The transistor's silicon material and complex configuration make it suitable for various electronic projects.
LOGIC LEVEL COMPATIBLE
COMPLEX
MS-012AC
R-PDSO-G16
7
16
Nickel/Palladium/Gold (Ni/Pd/Au)
NOT SPECIFIED
STX817A
STX817A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9 W, an operating temp up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for compact electronic circuits.
80 V
25
O-PBCY-W3
WIRE
50 MHz
DZT3150-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A;
50
R-PDSO-G4
4
2 W
150 MHz
DZT853-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 6 A;
6 A
100 V
130 MHz
2N4125TFR
Fairchild Semiconductor
2N4125TFR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 30V and max current of 0.2A. It has a min DC current gain of 25, making it suitable for switching applications with a max power dissipation of 0.35W in cylindrical package style.
.35 W
2N5089TFR
2N5089TFR by Fairchild Semiconductor is a NPN BJT with max. collector-emitter voltage of 25V, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its single configuration and max. power dissipation of 0.35W in a cylindrical package with matte tin finish.
LOW NOISE
450
AMPLIFIER
2N5089TF
2N5089TF by Fairchild Semiconductor is a NPN bipolar junction transistor with a min DC current gain of 450 and max collector-emitter voltage of 25V. It is commonly used in amplifier applications due to its high transition frequency of 50MHz, making it suitable for small signal amplification tasks. The package style is cylindrical with a terminal finish of matte tin, providing durability and reliability for through-hole mounting configurations.
BC32725TAR
BC32725TAR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 45V and a max collector current of 0.8A. It has a min DC current gain of 100, making it suitable for switching applications up to 100MHz. The package style is cylindrical with a plastic/epoxy body material and matte tin terminal finish, featuring through-hole terminals in a round shape.
.8 A
45 V
.625 W
BC547BTAR
BC547BTAR by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and max collector-emitter voltage of 45V. Ideal for switching applications, it offers a min DC current gain of 200 and operates at temperatures up to 150°C.
300 MHz
BC547BTFR
Fairchild Semiconductor's BC547BTFR is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications, it offers a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V.
BC548CTAR
BC548CTAR by Fairchild Semiconductor is a NPN BJT transistor with hFE of 420. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications due to its max collector-emitter voltage of 30V and collector current of 0.1A.
420
BC549CTFR
BC549CTFR by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A, ideal for switching applications. It has a min DC current gain of 420 and can handle up to 0.625W power dissipation. The package style is cylindrical with matte tin terminal finish, suitable for through-hole mounting.
KSA992PBU
Fairchild Semiconductor's KSA992PBU is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 200 and can handle a max collector current of 0.05A. With a max power dissipation of 0.5W and operating temperature up to 150°C, it is suitable for various electronic circuits requiring high gain and low power consumption.
.05 A
120 V
KSA992PTA
Fairchild Semiconductor's KSA992PTA is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. With a max power dissipation of 0.5W and max collector-emitter voltage of 120V, it operates at up to 150°C. Featuring a min hFE of 200 and fT of 100MHz, this transistor is housed in a cylindrical package suitable for through-hole mounting.
2PA1774R,135
NXP Semiconductors
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
.15 A
180
2PB709AQW,115
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
60 MHz
2PC4617R,135
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
2PD601AQW,115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
PDTA114TEF,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 50 V;
PDTA115EE,115
PDTA115EE,115 by NXP Semiconductors is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.02A, and power dissipation of 0.15W. This surface-mount transistor operates at up to 150°C and comes in a small outline package suitable for various electronic devices.
.02 A
PDTA123EE,115
NXP Semiconductors' PDTA123EE,115 is a PNP BJT with 50V VCE, 0.1A IC, and 30 hFE. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and built-in resistor. Operating up to 150°C, it's suitable for surface mount designs requiring compact components.
PDTA123JK,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN;
BUILT-IN BIAS RESISTOR RATIO IS 21.36
TO-236
PDTA123TE,115
NXP Semiconductors' PDTA123TE,115 is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 30. The package is surface mountable with gull wing terminals in a small outline shape.
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