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VT6X1T2R

ROHM

VT6X1T2R by ROHM

ROHM's VT6X1T2R is a NPN BJT with 2 elements, ideal for switching applications. It has a max power dissipation of 0.15W, hFE of 120, and fT of 400MHz. With a max collector-emitter voltage of 20V and max collector current of 0.2A, it operates up to 150°C making it suitable for various electronic designs.

Median Price

$0.125

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Verical

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Chip1Stop

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Nova Conductors

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Ampacity Inc.

Singapore . 1,504 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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AZTECH Wire

Italy . 332 parts In-Stock

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Overview

Unlock the power of seamless switching with the VT6X1T2R by ROHM. Renowned for their high-quality components, ROHM brings you a Small Signal Bipolar Junction Transistor that epitomizes reliability and performance. Ideal for various applications, this NPN transistor offers unparalleled value with its separate configuration and dual elements. With a maximum operating temperature of 150°C and a transition frequency of 400 MHz, this transistor guarantees optimal functionality and efficiency. Elevate your projects with the VT6X1T2R by ROHM - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, which require rapid on/off transitions, making it ideal for use in electronic circuits that require fast switching speeds.

Surface Mount: YES

Enables easy integration onto circuit boards, saving space and allowing for automated assembly.

Maximum Power Dissipation (Abs): 0.15 W

With a low power dissipation, this transistor generates less heat during operation, increasing efficiency and reducing the need for additional cooling mechanisms.

Minimum DC Current Gain (hFE): 120

A high DC current gain indicates that the transistor can amplify small input signals effectively, ensuring accurate signal processing in various circuits.

Maximum Collector-Emitter Voltage: 20 V

Can handle high voltage levels, making it suitable for circuits where voltage spikes may occur.

Nominal Transition Frequency (fT): 400 MHz

With a high transition frequency, this transistor can operate at high frequencies, making it suitable for high-speed applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) VT6X1T2R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

VT6X1T2R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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