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HBDM60V600W-7

Diodes Incorporated

HBDM60V600W-7 by Diodes Incorporated

Diodes Inc.'s HBDM60V600W-7 is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 0.5A collector current at 65V. With a transition frequency of 100MHz, it's ideal for high-frequency applications in electronics requiring small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 8,604 parts In-Stock

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Vyrian

USA . 6,832 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.447

100+ parts

$0.407

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$0.367

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100

$0.447

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$0.367

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Modulus Dynamics

Lithuania . 4,032 parts In-Stock

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$1.045

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$1.045

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$1.045

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Corohmni

South Africa . 135 parts In-Stock

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$1.867

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$1.867

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AZTECH Wire

Italy . 38 parts In-Stock

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$9.760

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$9.760

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Ampacity Inc.

Singapore . 1,045 parts In-Stock

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$31.050

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$31.050

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Lixinc

USA . 9,916 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 2,734 parts In-Stock

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Continental Prestige Electronics

USA . 1,099 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Elevate your electronic designs with the HBDM60V600W-7 from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. This small signal bipolar junction transistor offers exceptional performance in various applications, providing customers with unmatched value and benefits. Whether you're working on amplifiers, switches, or other electronic devices, this NPN and PNP transistor with separate configuration and gull wing terminal form is sure to meet your needs. Trust Diodes Incorporated for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatile use in different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS

The separate 2 elements configuration enables independent control and operation of each transistor, offering flexibility in circuit design.

Surface Mount: YES

Being surface mountable makes it easy to integrate into compact electronic designs and saves space on the PCB.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 100

Having a minimum DC current gain of 100 ensures reliable amplification in various circuits.

Maximum Collector-Emitter Voltage: 65 V

The high collector-emitter voltage rating of 65V allows for use in a wide range of voltage applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current levels, suitable for many applications.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency of 100MHz indicates good high-frequency performance, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) HBDM60V600W-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

HBDM60V600W-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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