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NSBC114YPDXV6T5G

Onsemi

NSBC114YPDXV6T5G by Onsemi

NSBC114YPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, 2 elements with built-in resistor. It has a max power dissipation of 0.5W, hFE of 80, and can handle up to 50V collector-emitter voltage. Ideal for switching applications in surface mount designs due to its compact rectangular package style.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 49,000 parts In-Stock

1+ parts

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$0.052

49,000

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$0.052

Rochester

USA . 27,058 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.051

10k+ parts

$0.046

27,058

-

$0.062

$0.051

$0.046

DigiKey

USA . 27,058 parts In-Stock

1+ parts

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$0.080

27,058

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$0.080

Verical

USA . 20,000 parts In-Stock

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$0.058

20,000

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$0.058

Distributors (In-Stock)

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Digiode

USA . 1,297 parts In-Stock

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$0.050

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1,297

$0.050

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Chip Stock

USA . 24,000 parts In-Stock

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24,000

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Flip Electronics

USA . 16,000 parts In-Stock

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Vyrian

USA . 9,005 parts In-Stock

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9,005

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Distributors (Availability)

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Corphita

USA . 560 parts In-Stock

1+ parts

$0.048

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560

$0.048

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Component Stockers USA

USA . 25,836 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.050

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$0.050

25,836

$0.050

$0.050

$0.050

$0.050

Corohmni

South Africa . 117 parts In-Stock

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$0.052

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117

$0.052

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AZTECH Wire

Italy . 417 parts In-Stock

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$22.140

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417

$22.140

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Continental Prestige Electronics

USA . 24,000 parts In-Stock

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$0.052

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24,000

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QUARKTWIN TECHNOLOGY LTD

USA . 16,667 parts In-Stock

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16,667

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Problanco Electronics

Mexico . 5,216 parts In-Stock

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Kulean Microsystems

USA . 4,058 parts In-Stock

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4,058

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SupplyDigital Components

Austria . 2,016 parts In-Stock

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TANS Electronics

Latvia . 1,237 parts In-Stock

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UHIMA Technologies

Türkiye . 143 parts In-Stock

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143

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Overview

Enhance your electronic projects with the NSBC114YPDXV6T5G Small Signal Bipolar Junction Transistor by Onsemi. Crafted with precision and expertise, Onsemi's transistors are known for their reliability and performance. Ideal for switching applications, this NPN and PNP transistor features built-in resistors for seamless integration. Its compact design and high operating temperature make it suitable for a wide range of projects. Experience the benefits of quality components with Onsemi's NSBC114YPDXV6T5G - elevate your creations today!

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type - NPN AND PNP

Offers versatility in circuit design by supporting both NPN and PNP configurations.

Configuration - SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuits and provides built-in resistance for stable performance.

Transistor Application - SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Surface Mount - YES

Suitable for surface mount technology, enabling compact and space-saving circuit designs.

Package Shape - RECTANGULAR

The rectangular shape allows for easy placement and mounting on PCBs.

Terminal Form - FLAT

Flat terminals provide a secure connection and ease of soldering onto circuit boards.

No. of Elements - 2

Two separate elements offer enhanced functionality and design flexibility.

No. of Terminals - 6

A higher number of terminals allow for more connections and design possibilities.

Maximum Power Dissipation (Abs) - 0.5 W

Can handle moderate power levels, suitable for a variety of applications.

Package Style (Meter) - SMALL OUTLINE

Compact package style saves space and makes it suitable for small electronic devices.

Minimum DC Current Gain (hFE) - 80

A high minimum DC current gain ensures consistent and stable performance.

Maximum Operating Temperature - 150 °C

Can operate reliably at high temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage - 50 V

Can handle moderate voltage levels, making it versatile for different circuit requirements.

Transistor Element Material - SILICON

Silicon material provides good performance characteristics and reliability for the transistor.

Maximum Collector Current (IC) - 0.1 A

Can handle moderate current levels, suitable for various switching applications.

Terminal Finish - MATTE TIN

Matte tin finish provides good solderability and ensures a reliable connection.

Terminal Position - DUAL

Dual terminal positions offer flexibility in circuit design and connections.

Maximum Time At Peak Reflow Temperature (s) - 30

Can withstand peak reflow temperatures for a sufficient duration during assembly.

Peak Reflow Temperature °C - 260

Suitable for high-temperature reflow soldering processes during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114YPDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114YPDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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