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NSBC114YPDXV6T1G

Onsemi

NSBC114YPDXV6T1G by Onsemi

NSBC114YPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistor, 0.5W power dissipation, and max collector-emitter voltage of 50V. This transistor operates at up to 150°C, in a small outline package suitable for surface mount assembly.

Median Price

$0.056

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 360 parts In-Stock

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$0.056

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360

$0.056

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Chip1Stop

Japan . 4,000 parts In-Stock

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$0.068

4,000

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$0.068

Verical

USA . 360 parts In-Stock

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$0.037

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360

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$0.037

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Distributors (In-Stock)

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Vyrian

USA . 401 parts In-Stock

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$0.049

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$0.049

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Digiode

USA . 2,298 parts In-Stock

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$0.238

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Flip Electronics

USA . 168,000 parts In-Stock

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Chip Stock

USA . 77,000 parts In-Stock

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First Choice Components Inc.

USA . 3,200 parts In-Stock

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3,200

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Corohmni

South Africa . 216 parts In-Stock

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$0.049

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Continental Prestige Electronics

USA . 8 parts In-Stock

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$0.202

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8

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Corphita

USA . 2,461 parts In-Stock

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$0.225

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Perfect Parts

USA . 120,148 parts In-Stock

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ChipstoGo Electronic ltd

UK . 12,000 parts In-Stock

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Kulean Microsystems

USA . 8,046 parts In-Stock

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TANS Electronics

Latvia . 6,406 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Problanco Electronics

Mexico . 2,688 parts In-Stock

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SupplyDigital Components

Austria . 2,172 parts In-Stock

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Lixinc

USA . 1,975 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,914 parts In-Stock

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Kepictronics

USA . 1,430 parts In-Stock

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UHIMA Technologies

Türkiye . 457 parts In-Stock

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Overview

Upgrade your electronic devices with the NSBC114YPDXV6T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this transistor boasts NPN and PNP configurations, separate elements with built-in resistors, and a maximum collector-emitter voltage of 50 V. Ideal for switching applications, this transistor offers superior performance and reliability. Experience the benefits of seamless surface mounting, high power dissipation, and a compact package shape. Trust Onsemi for cutting-edge technology and elevate your electronics to the next level with the NSBC114YPDXV6T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor reliable for long-term use.

Polarity or Channel Type: NPN AND PNP

Offers flexibility in circuit design as both NPN and PNP transistors are available in one package.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuits, and the built-in resistor simplifies the design process.

Transistor Application: SWITCHING

Ideal for applications where rapid switching between on and off states is required.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving space and reducing overall component costs.

Maximum Power Dissipation (Abs): 0.5 W

Suitable for low-power applications where efficient power management is essential.

Minimum DC Current Gain (hFE): 80

Ensures consistent amplification and signal control in various circuit configurations.

Maximum Operating Temperature: 150 °C

Can withstand relatively high temperatures, making it suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 50 V

Allows for handling moderate voltage levels in the circuit without risk of damage.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for low-power applications.

Terminal Finish: MATTE TIN

Provides a reliable electrical connection and protects against corrosion, ensuring long-term performance.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes, ensuring reliable solder connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114YPDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114YPDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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