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PDTA123TE,115

NXP Semiconductors

PDTA123TE,115 by NXP Semiconductors

NXP Semiconductors' PDTA123TE,115 is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 30. The package is surface mountable with gull wing terminals in a small outline shape.

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 27,000 parts In-Stock

1+ parts

-

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$0.066

1k+ parts

$0.055

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$0.049

27,000

-

$0.066

$0.055

$0.049

Verical

USA . 27,000 parts In-Stock

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$0.061

27,000

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$0.061

Distributors (In-Stock)

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Digiode

USA . 3,536 parts In-Stock

1+ parts

$0.021

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3,536

$0.021

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Vyrian

USA . 3,214 parts In-Stock

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3,214

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Anansix

USA . 566 parts In-Stock

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566

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Distributors (Availability)

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Corphita

USA . 2,352 parts In-Stock

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$0.020

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2,352

$0.020

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AZTECH Wire

Italy . 164 parts In-Stock

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$11.460

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164

$11.460

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Continental Prestige Electronics

USA . 27,000 parts In-Stock

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$0.026

27,000

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$0.026

UNI Independent Distributors

Spain . 2,970 parts In-Stock

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2,970

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Microchip USA

USA . 476 parts In-Stock

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Overview

Elevate your electronic designs with the PDTA123TE,115 by NXP Semiconductors. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled performance in switching applications. With a single configuration and built-in resistor, this PNP transistor is designed to streamline your projects. Its compact package, high reliability, and maximum power dissipation of 0.15 W make it a valuable asset for your circuitry needs. Trust NXP Semiconductors to deliver quality and innovation with every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

This PNP transistor allows for current to flow from collector to emitter when a positive voltage is applied to the base, offering flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for small-scale applications.

Transistor Application: SWITCHING

This transistor is specifically designed for switching applications, providing efficient performance in on/off operations.

Surface Mount: YES

Being surface mountable, this transistor can be easily mounted on PCBs, saving assembly time and space.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and alignment on the circuit board, contributing to efficient assembly.

Terminal Form: GULL WING

The gull wing terminal form provides secure soldering points, ensuring reliable electrical connections.

No. of Terminals: 3

With only 3 terminals, this transistor is simple to integrate into circuits, reducing complexity.

Maximum Power Dissipation (Abs): 0.15 W

The low power dissipation of this transistor helps in reducing heat generation and improving overall efficiency.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 30

With a minimum DC current gain of 30, this transistor provides stable amplification in circuit applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range of 150°C allows for reliable performance in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50V ensures safe operation in various voltage applications.

Transistor Element Material: SILICON

Silicon-based element material offers high performance and reliability in switching applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1A allows for sufficient current flow in circuit operations.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and reliable solderability, ensuring long-term circuit performance.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit board layout and soldering options.

Maximum Time At Peak Reflow Temperature (s): 30

The short time duration of 30s at peak reflow temperature ensures proper soldering without damaging the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C enables reliable and secure soldering during manufacturing processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA123TE,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PDTA123TE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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