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PDTA114ET,215

NXP Semiconductors

PDTA114ET,215 by NXP Semiconductors

The NXP Semiconductors PDTA114ET,215 is a PNP BJT transistor with VCEsat of 0.3V and hFE of 30. Ideal for switching applications, it has a max IC of 0.1A and operates at up to 150°C. With a package style of small outline, it features built-in resistor and GULL WING terminals.

Median Price

$0.022

Lifecycle Status

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Arrow

USA . 189,000 parts In-Stock

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TTI

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EBV Elektronik

Germany . 138,000 parts In-Stock

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Avnet

USA . 78,000 parts In-Stock

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Rochester

USA . 65,500 parts In-Stock

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$0.028

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Elektronika Sales Private Limited

India . 45,000 parts In-Stock

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Verical

USA . 2,858 parts In-Stock

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Chip1Stop

Japan . 1,569 parts In-Stock

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Digiode

USA . 2,583 parts In-Stock

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Nova Conductors

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Maritex

Poland . 4,766 parts In-Stock

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IBS Electronics

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NAC Semi

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Chip Stock

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ComSIT Distribution GmbH

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Sensible Micro Corp

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Cyclops Electronics Ltd

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LIBRA Elektronik GmbH

Germany . 8,648 parts In-Stock

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Vyrian

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Bristol Electronics

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Inventory MP

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PC Components Company LLC

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Anansix

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Semicontronic

India . 409,185 parts In-Stock

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Ampacity Inc.

Singapore . 132,784 parts In-Stock

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Component Stockers USA

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Corphita

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AZTECH Wire

Italy . 12,338 parts In-Stock

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Argo Parts USA

USA . 3,534 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Corohmni

South Africa . 1,314 parts In-Stock

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Advanced Electronics

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Aztec Data Supply Inc.

USA . 4,374 parts In-Stock

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Perfect Parts

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Eastek

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GreenTree Electronics

Israel . 432,000 parts In-Stock

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Continental Prestige Electronics

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Futuretech Components

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UNI Independent Distributors

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Overview

Discover the power of innovation with the NXP Semiconductors PDTA114ET,215 Small Signal Bipolar Junction Transistor. Designed for switching applications, this PNP transistor offers high performance in a compact package. With a built-in resistor, low VCEsat, and high DC current gain, this transistor delivers reliable operation at temperatures up to 150°C. Ideal for a wide range of electronic devices, the PDTA114ET,215 provides customers with superior quality and value, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and helps in protecting the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP type transistors are required.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Saves space and simplifies circuit design by having a built-in resistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation.

Surface Mount: YES

Can be easily mounted on the surface of a PCB, saving assembly time.

Maximum VCEsat: 0.3 V

Low VCEsat helps in reducing power losses and improving efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and routing in circuit layouts.

Terminal Form: GULL WING

Gull wing terminals make soldering easier and ensure a strong connection.

Maximum Power Dissipation (Abs): 0.25 W

Can handle power dissipation of up to 0.25W without damage.

Package Style (Meter): SMALL OUTLINE

Small outline package is space-saving and suitable for compact designs.

Minimum DC Current Gain (hFE): 30

A higher minimum hFE ensures reliable amplification and performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various environments.

Maximum Collector-Base Capacitance: 5 pF

Low capacitance reduces the risk of signal distortion and interference.

Maximum Collector-Emitter Voltage: 50 V

Can handle up to 50V, suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon is a common material for transistors, known for its reliability and performance.

Maximum Collector Current (IC): 0.1 A

Able to handle currents up to 0.1A, suitable for low power applications.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and conductivity.

Terminal Position: DUAL

Dual terminal position provides versatility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for up to 30 seconds during soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable soldering and connection.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for high-speed switching and performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA114ET,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

PDTA114ET,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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