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PDTA144EU,115

NXP Semiconductors

PDTA144EU,115 by NXP Semiconductors

NXP Semiconductors' PDTA144EU,115 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 68, VCE of 50V, and IC of 0.1A. With a max power dissipation of 0.2W and operating temp up to 150°C, it's ideal for compact surface mount designs.

Median Price

$0.095

Lifecycle Status

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1k+

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Chip1Stop

Japan . 44,075 parts In-Stock

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$0.139

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44,075

$0.139

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DigiKey

USA . 19 parts In-Stock

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$0.140

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$0.054

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$0.034

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19

$0.140

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$0.034

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Mouser Electronics

USA . 390 parts In-Stock

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$0.290

100+ parts

$0.066

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$0.043

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$0.034

390

$0.290

$0.066

$0.043

$0.034

Rochester

USA . 436,000 parts In-Stock

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-

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$0.032

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$0.027

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$0.024

436,000

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$0.032

$0.027

$0.024

Verical

USA . 367,000 parts In-Stock

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Future Electronics

Canada . 63,000 parts In-Stock

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$0.012

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$0.012

Arrow

USA . 36,000 parts In-Stock

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EBV Elektronik

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Element14

Singapore . 5,175 parts In-Stock

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$4.740

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$2.170

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$1.840

5,175

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$4.740

$2.170

$1.840

Avnet

USA . 3,000 parts In-Stock

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$0.011

3,000

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$0.011

Farnell

UK . 3,000 parts In-Stock

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$0.059

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$0.038

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$0.030

3,000

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$0.059

$0.038

$0.030

Newark

USA . 5 parts In-Stock

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$0.095

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$0.060

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5

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$0.095

$0.060

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Digiode

USA . 4,244 parts In-Stock

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$0.021

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$0.021

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Nova Conductors

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$0.035

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10

$0.035

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TME

Poland . 1,027 parts In-Stock

1+ parts

$0.090

100+ parts

$0.048

1k+ parts

$0.029

10k+ parts

$0.025

1,027

$0.090

$0.048

$0.029

$0.025

Chip Stock

USA . 136,000 parts In-Stock

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IBS Electronics

USA . 21,000 parts In-Stock

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$0.081

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$0.081

NAC Semi

USA . 18,000 parts In-Stock

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$0.118

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Vyrian

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Anansix

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India . 279,488 parts In-Stock

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$0.014

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279,488

$0.014

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$0.014

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Corphita

USA . 4,799 parts In-Stock

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Netroflash

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Argo Parts USA

USA . 1,559 parts In-Stock

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AZTECH Wire

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

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$1.508

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Perfect Parts

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GreenTree Electronics

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Eastek

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QUARKTWIN TECHNOLOGY LTD

USA . 15,726 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Continental Prestige Electronics

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$0.039

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UNI Independent Distributors

Spain . 5,328 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

USA . 2,455 parts In-Stock

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Overview

Upgrade your electronic projects with the PDTA144EU,115 by NXP Semiconductors. This high-quality Small Signal Bipolar Junction Transistor (BJT) offers a reliable solution for switching applications. With its PNP polarity and built-in resistor configuration, this transistor provides ease of use and versatility. The compact rectangular package design makes it ideal for surface mounting, while the maximum power dissipation of 0.2W ensures efficiency. Trust NXP Semiconductors for top-of-the-line components that deliver exceptional performance, making your projects stand out.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for higher current flow and faster switching speeds.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the board.

Transistor Application: SWITCHING

Ideal for applications requiring rapid on/off switching operations.

Surface Mount: YES

Easily mountable on circuit boards, reducing assembly time and costs.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on PCBs, maximizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering during assembly.

No. of Terminals: 3

The 3 terminals offer flexibility in circuit configurations and connections.

Maximum Power Dissipation (Abs): 0.2 W

Capable of handling power dissipation up to 0.2 W for reliable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact designs.

Minimum DC Current Gain (hFE): 68

A minimum DC current gain of 68 ensures stable and consistent amplification.

Maximum Operating Temperature: 150 °C

Operates effectively at temperatures up to 150°C, suitable for various environments.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage of 50 V, this transistor can handle moderate voltage levels.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in a wide range of applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling collector currents of up to 0.1 A for efficient operation.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting orientations.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper soldering and assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA144EU,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PDTA144EU,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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