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PDTA114YU

NXP Semiconductors

PDTA114YU by NXP Semiconductors

The NXP Semiconductors PDTA114YU is a PNP BJT transistor with 50V VCEO, 0.1A IC, and hFE of 100. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and built-in resistor. Operating up to 150°C, it's surface mountable with tin finish.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Adafruit Industries

USA . 88 parts In-Stock

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Nova Conductors

Japan . 45 parts In-Stock

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$1.000

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ComSIT Distribution GmbH

Germany . 76,415 parts In-Stock

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Bristol Electronics

USA . 6,076 parts In-Stock

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Digiode

USA . 1,864 parts In-Stock

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Anansix

USA . 1,707 parts In-Stock

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Vyrian

USA . 634 parts In-Stock

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J2 Sourcing AB

Sweden . 131 parts In-Stock

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Microchip USA

USA . 3,108 parts In-Stock

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$0.155

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Aztec Data Supply Inc.

USA . 2,237 parts In-Stock

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$0.314

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Aranea Global

USA . 1,000 parts In-Stock

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$0.980

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$0.941

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$0.980

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AZTECH Wire

Italy . 7,886 parts In-Stock

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$8.299

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Semicontronic

India . 88 parts In-Stock

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$10.774

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$10.718

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Ampacity Inc.

Singapore . 88 parts In-Stock

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$18.050

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Kepictronics

USA . 32,886 parts In-Stock

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 10,779 parts In-Stock

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Futuretech Components

Singapore . 9,000 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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UNI Independent Distributors

Spain . 1,643 parts In-Stock

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Corphita

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Supply Digital

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Perfect Parts

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Advanced Electronics

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Overview

Elevate your electronic projects with the high-quality PDTA114YU by NXP Semiconductors. This Small Signal Bipolar Junction Transistor (BJT) offers a PNP configuration with a built-in resistor, perfect for switching applications. With a maximum collector current of 0.1 A and a DC current gain of 100, this transistor ensures reliable performance. Its compact rectangular package body makes it easy to integrate into your designs, while the tin terminal finish provides durability. Trust NXP Semiconductors for cutting-edge technology that delivers value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and better performance under various conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used for applications that require high speed switching, making this product suitable for such scenarios.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for applications that require a compact design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient and reliable performance in such scenarios.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, making it suitable for automated manufacturing processes.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, this transistor can handle moderate power loads, suitable for a variety of applications.

Package Shape: RECTANGULAR

The rectangular package shape is common and easy to work with, offering versatility in mounting options.

Terminal Form: GULL WING

The gull wing terminal form provides good mechanical strength and solderability, ensuring secure connections on the PCB.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and functionality, making it versatile for a range of applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50V makes this transistor suitable for applications that require higher voltage handling capabilities.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current loads, making it suitable for various switching applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable performance in a wide range of environmental conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA114YU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PDTA114YU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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