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NSBC124EPDXV6T5G

Onsemi

NSBC124EPDXV6T5G by Onsemi

NSBC124EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistors, max power dissipation of 0.5W, and can operate b/w -55 to 150 °C. Suitable for surface mount designs in various electronic circuits.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.051

10k+ parts

$0.046

88,000

-

$0.062

$0.051

$0.046

DigiKey

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

88,000

-

-

-

$0.080

Farnell

UK . 88,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

88,000

-

-

-

$0.052

Verical

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.058

80,000

-

-

-

$0.058

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 665 parts In-Stock

1+ parts

$0.050

100+ parts

-

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665

$0.050

-

-

-

Chip Stock

USA . 60,000 parts In-Stock

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60,000

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Vyrian

USA . 9,140 parts In-Stock

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-

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9,140

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-

-

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Distributors (Availability)

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Corphita

USA . 1,121 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

-

10k+ parts

-

1,121

$0.048

-

-

-

Component Stockers USA

USA . 82,102 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

$0.050

82,102

$0.050

$0.050

$0.050

$0.050

Corohmni

South Africa . 334 parts In-Stock

1+ parts

$0.052

100+ parts

-

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-

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334

$0.052

-

-

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AZTECH Wire

Italy . 837 parts In-Stock

1+ parts

$11.440

100+ parts

-

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837

$11.440

-

-

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Continental Prestige Electronics

USA . 88,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.052

10k+ parts

-

88,000

-

-

$0.052

-

Kepictronics

USA . 88,000 parts In-Stock

1+ parts

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88,000

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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12,000

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TANS Electronics

Latvia . 7,349 parts In-Stock

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7,349

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A-Z Elektronik GmbH

Germany . 7,250 parts In-Stock

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7,250

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Kulean Microsystems

USA . 3,179 parts In-Stock

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3,179

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Problanco Electronics

Mexico . 3,179 parts In-Stock

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3,179

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QUARKTWIN TECHNOLOGY LTD

USA . 3,137 parts In-Stock

1+ parts

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3,137

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SupplyDigital Components

Austria . 833 parts In-Stock

1+ parts

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833

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UHIMA Technologies

Türkiye . 273 parts In-Stock

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273

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Overview

Discover the NSBC124EPDXV6T5G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. With separate NPN and PNP elements and built-in resistors, this transistor offers exceptional performance in a compact package. Manufactured by Onsemi, a trusted industry leader, this product guarantees reliability and durability. Perfect for a wide range of electronic devices, this transistor provides customers with unmatched value, efficiency, and convenience. Upgrade your designs with the NSBC124EPDXV6T5G and experience the superior quality and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN AND PNP

Offers flexibility in circuit design and compatibility with a wide range of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuits and simplifies the overall design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and efficient operation.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards, reducing assembly time and costs.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels, suitable for a variety of low to medium power applications.

Minimum DC Current Gain (hFE): 60

Ensures consistent and stable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without risk of overheating, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 50 V

Provides a high voltage handling capability, making it suitable for a wide range of voltage requirements.

Minimum Operating Temperature: -55 °C

Capable of operating in extreme cold temperatures, offering versatility in different environmental conditions.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels, suitable for a variety of low to medium current applications.

Terminal Finish: MATTE TIN

Corrosion-resistant finish that ensures good electrical conductivity and long-term reliability.

Peak Reflow Temperature °C: 260

Can withstand high temperature reflow soldering processes without damage, facilitating efficient assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC124EPDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC124EPDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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