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EMF5XV6T5G

Onsemi

EMF5XV6T5G by Onsemi

The Onsemi EMF5XV6T5G is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, 0.1A max collector current, and 0.5W power dissipation. Ideal for applications requiring compact design and high DC current gain (hFE) in electronic circuits.

Median Price

$0.131

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 183,771 parts In-Stock

1+ parts

-

100+ parts

$0.136

1k+ parts

$0.113

10k+ parts

$0.101

183,771

-

$0.136

$0.113

$0.101

DigiKey

USA . 183,771 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.170

183,771

-

-

-

$0.170

Farnell

UK . 183,771 parts In-Stock

1+ parts

-

100+ parts

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$0.118

183,771

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$0.118

Verical

USA . 64,000 parts In-Stock

1+ parts

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$0.126

64,000

-

-

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$0.126

Chip1Stop

Japan . 7,980 parts In-Stock

1+ parts

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7,980

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Distributors (In-Stock)

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Digiode

USA . 1,016 parts In-Stock

1+ parts

$0.111

100+ parts

-

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1,016

$0.111

-

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Chip Stock

USA . 63,000 parts In-Stock

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63,000

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Vyrian

USA . 5,981 parts In-Stock

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5,981

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Distributors (Availability)

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Corohmni

South Africa . 299 parts In-Stock

1+ parts

$0.064

100+ parts

-

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299

$0.064

-

-

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Corphita

USA . 1,548 parts In-Stock

1+ parts

$0.105

100+ parts

-

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1,548

$0.105

-

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Component Stockers USA

USA . 264,164 parts In-Stock

1+ parts

$0.120

100+ parts

$0.110

1k+ parts

$0.100

10k+ parts

$0.100

264,164

$0.120

$0.110

$0.100

$0.100

Native Components

USA . 29 parts In-Stock

1+ parts

$0.199

100+ parts

-

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$0.191

29

$0.199

-

-

$0.191

Northwest PG Solutions

USA . 728 parts In-Stock

1+ parts

$0.218

100+ parts

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$0.193

728

$0.218

-

-

$0.193

AZTECH Wire

Italy . 829 parts In-Stock

1+ parts

$10.900

100+ parts

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829

$10.900

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Continental Prestige Electronics

USA . 183,772 parts In-Stock

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$0.092

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183,772

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$0.092

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QUARKTWIN TECHNOLOGY LTD

USA . 22,953 parts In-Stock

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Kepictronics

USA . 12,000 parts In-Stock

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12,000

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Problanco Electronics

Mexico . 7,469 parts In-Stock

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7,469

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TANS Electronics

Latvia . 5,400 parts In-Stock

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5,400

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Kulean Microsystems

USA . 5,134 parts In-Stock

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5,134

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A-Z Elektronik GmbH

Germany . 2,156 parts In-Stock

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2,156

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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1,500

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SupplyDigital Components

Austria . 1,390 parts In-Stock

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1,390

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UHIMA Technologies

Türkiye . 181 parts In-Stock

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181

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Overview

Experience the unmatched quality and reliability of the EMF5XV6T5G by Onsemi, a leading manufacturer in the industry. This small signal bipolar junction transistor (BJT) boasts NPN and PNP polarity types in a separate configuration with built-in resistors, offering versatility in various applications. With 2 elements and 6 terminals in a compact rectangular package, this transistor provides a maximum power dissipation of 0.5W and a minimum DC current gain of 80. Trust in Onsemi's expertise and elevate your projects with the EMF5XV6T5G for optimal performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Allows flexibility in circuit designs as it can be used for both NPN and PNP type transistors.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Includes built-in resistors, saving space and simplifying circuit design.

Surface Mount: YES

Easy to mount on circuit boards, making it suitable for compact electronic designs.

Maximum Power Dissipation (Abs): 0.5 W

Can handle a significant amount of power without overheating, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications that require a relatively high voltage capability.

Minimum DC Current Gain (hFE): 80

Ensures a high current gain, allowing for accurate amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for various electronic applications.

Terminal Finish: MATTE TIN

Provides a reliable and durable terminal finish for secure connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMF5XV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

EMF5XV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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