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EMF5XV6T5

Onsemi

EMF5XV6T5 by Onsemi

The Onsemi EMF5XV6T5 is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, 0.1A max collector current, and 0.5W power dissipation. Ideal for applications requiring compact design and high DC current gain (hFE).

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,048,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

1,048,000

-

$0.066

$0.055

$0.049

Verical

USA . 1,048,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

1,048,000

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,008 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

1,008

$0.051

-

-

-

Vyrian

USA . 1,165 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

-

1,165

$0.054

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 70 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

70

$0.049

-

-

-

Corohmni

South Africa . 105 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

-

105

$0.054

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 27,240 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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27,240

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-

-

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RC Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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12,000

-

-

-

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TANS Electronics

Latvia . 6,263 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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6,263

-

-

-

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SupplyDigital Components

Austria . 5,685 parts In-Stock

1+ parts

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100+ parts

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5,685

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Kulean Microsystems

USA . 5,669 parts In-Stock

1+ parts

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100+ parts

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5,669

-

-

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A-Z Elektronik GmbH

Germany . 5,078 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,078

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Northwest PG Solutions

USA . 1,259 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,259

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Native Components

USA . 984 parts In-Stock

1+ parts

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984

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Problanco Electronics

Mexico . 512 parts In-Stock

1+ parts

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512

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UHIMA Technologies

Türkiye . 508 parts In-Stock

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100+ parts

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508

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Overview

Unlock the power of innovation with the EMF5XV6T5 by Onsemi - a small signal bipolar junction transistor that delivers unmatched quality and reliability. Manufactured by the industry leader, Onsemi, this product is designed to meet the demands of various applications with its NPN and PNP configuration, built-in resistor, and high DC current gain. Offering a maximum collector-emitter voltage of 50V and a peak reflow temperature of 260 °C, the EMF5XV6T5 ensures optimal performance and durability. Elevate your projects with this cutting-edge transistor that promises value, efficiency, and precision in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and allows for a compact design, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility in circuit design and compatibility with different types of circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and can help in reducing external components, saving space and improving overall performance.

Surface Mount: YES

Being surface mountable makes the transistor suitable for automated assembly processes, saving time and cost in manufacturing.

Package Shape: RECTANGULAR

The rectangular shape provides a standard form factor and ease of mounting on PCBs, ensuring compatibility with existing designs.

No. of Elements: 2

Having 2 elements in one package can reduce the number of components required in a circuit and simplify overall design.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, the transistor can handle moderate power levels effectively, suitable for a variety of low-power applications.

Minimum DC Current Gain (hFE): 80

The high DC current gain of 80 ensures amplification of input signals with minimal distortion, making the transistor ideal for small signal amplification.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for operation in a wide range of voltage levels, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance, making the transistor durable and efficient.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for handling moderate current levels, suitable for a variety of low-power applications.

Terminal Finish: TIN

The Tin terminal finish provides good solderability and resistance to corrosion, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

Having dual terminal positions allows for flexible PCB layout and ease of connection in various circuit configurations.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C enables high-temperature soldering processes, ensuring secure and reliable connections during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMF5XV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

EMF5XV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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